| PART |
Description |
Maker |
| LC331632M-10 LC331632M-12 LC331632M-70 LC331632M-8 |
512K (32768 words X 16 bits) Pseudo-SRAM
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| LC35256AM LC35256AT-10LV LC35256AT-12LV LC35256AT- |
256 K (32768 words X 8 bits) SRAM with OE and CE control Pins
|
SANYO[Sanyo Semicon Device]
|
| LC35256A LC35256AS LC35256AT-10 LC35256AT-70 LC352 |
256 K (32768 words X 8 bits) SRAM with OE and CE control Pins
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| LC36256AL LC36256AL-10 LC36256AL-12 LC36256AL-70 L |
256 K (32768 words x 8 bits) SRAM 256度（32768字8位）的SRAM
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| MSM54V12222A |
From old datasheet system
262214 Words x 12 Bits FIELD MEMORY
262,214 WORDS X 12 BITS FIELD MEMORY
|
OKI[OKI electronic componets]
|
| EDS2532AABJ-6B-E EDS2532AABJ-6BL-E |
256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位）
256M bits SDRAM (8M words ?32 bits)
|
Elpida Memory, Inc.
|
| EDS2532JEBH-75-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
|
Elpida Memory, Inc.
|
| EDX5116ABSE-4C-E EDX5116ABSE EDX5116ABSE-2A-E EDX5 |
512M bits XDR DRAM (32M words x16 bits)
|
ELPIDA[Elpida Memory]
|
| EDS2532EEBH-9A EDS2532EEBH-9A-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
|
Elpida Memory, Inc.
|
| EDD1216AATA-5C-E EDD1216AATA-5 EDD1216AATA-5B-E |
128M bits DDR SDRAM (8M words x 16 bits, DDR400)
|
ELPIDA[Elpida Memory]
|
| EDD1216AATA-5 EDD1216AATA-5B-E EDD1216AATA-5C-E |
128M bits DDR SDRAM (8M words x 16 bits, DDR400)
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
