PART |
Description |
Maker |
CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟 CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
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AS7C256 AS7C256-10 AS7C256-10JC AS7C256-10PC AS7C2 |
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix) High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28 High Performance 32Kx8 CMOS SRAM 高性能32Kx8 CMOS SRAM High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
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ETC[ETC] ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp. Alliance Semiconductor ...
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P4C1024-17PC P4C214-17PPC P4C1024-17JC P4C1024-17J |
128K X 8 STANDARD SRAM, 17 ns, PDIP32 PLASTIC, DIP-32 16K X 16 CACHE SRAM, 17 ns, PQCC52 PLASTIC, LCC-52 128K X 8 STANDARD SRAM, 17 ns, PDSO32 SOJ-32 64K X 1 STANDARD SRAM, 10 ns, PDIP22 1K X 4 STANDARD SRAM, 10 ns, PDIP18 128K X 8 STANDARD SRAM, 15 ns, PDSO32
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Performance Semiconductor, Corp. Pyramid Semiconductor, Corp. PERFORMANCE SEMICONDUCTOR CORP PYRAMID SEMICONDUCTOR CORP
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EDI8L24129V-BC EDI8L24129V12BI EDI8L24129V EDI8L24 |
10ns; 3.3V power supply; 128K x 24 SRAM SRAM MCP SDR Connector; No. of Contacts:26; Pitch Spacing:0.8mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 128K X 24 SRAM 3.3 VOLT 128K的X 24 SRAM.3 15ns; 3.3V power supply; 128K x 24 SRAM
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Electronic Theatre Controls, Inc. White Electronic Designs
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CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM 4-word Burst
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Renesas Technology / Hitachi Semiconductor
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HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 2-word Burst
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Renesas Technology / Hitachi Semiconductor
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GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM 12ns 100MHz 32K x 32 1Mb synchronous burst SRAM 10ns 133MHz 32K x 32 1Mb synchronous burst SRAM 9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM 11ns 117MHz 32K x 32 1Mb synchronous burst SRAM 9ns 150MHz 32K x 32 1Mb synchronous burst SRAM 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM
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GSI Technology, Inc.
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GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM 150MHz 9ns 64K x 32 2M synchronous burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100 64K X 32 CACHE SRAM, 12 ns, PQFP100 64K X 32 CACHE SRAM, 10 ns, PQFP100 5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器 2M Synchronous Burst SRAM 200万同步突发静态存储器 Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm 64K x 32 / 2M Synchronous Burst SRAM 117MHz 11ns 64K x 32 2M synchronous burst SRAM 66MHz 18ns 64K x 32 2M synchronous burst SRAM
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GSI Technology Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers
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AS7C3256A-8 AS7C3256A-8TCN AS7C3256A-8JC AS7C3256A |
SRAM - 3.3V Fast Asynchronous 3.3V 32K X 8 CMOS SRAM (Common I/O) 32K X 8 STANDARD SRAM, 8 ns, PDSO28 Dual 4-Input Positive-AND Gate 14-SSOP -40 to 85 32K X 8 STANDARD SRAM, 8 ns, PDSO28
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Alliance Semiconductor ... ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp.
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CY7C1350 7C1350 |
128Kx36 Pipelined SRAM with NoBL Architecture(带NoBL结构28Kx36流水线式 SRAM) 128K × 36至流水线与总线延迟静态存储器体系结构(带总线延迟结构28K × 36至流水线式的SRAM 128Kx36 Pipelined SRAM with NoBL Architecture(B>NoBL结构28Kx36流水线式 SRAM) From old datasheet system
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Cypress Semiconductor Corp.
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HY62LF16804A-I HY62LF16804A-C HY62LF16804A HY62LF1 |
512K X 16 STANDARD SRAM, 85 ns, PBGA48 High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits 512Kx16bit full CMOS SRAM
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HYNIX SEMICONDUCTOR INC Nel Frequency Controls,inc
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