| PART |
Description |
Maker |
| 865G 82865G 82865GV 865GV |
Intel 865G/865GV Graphics and Memory Controller Hub
|
INTEL[Intel Corporation]
|
| VT8601 |
Single-Chip Slot-1 / Socket-370 PCI North Bridge With Integrated AGP 2D / 3D Graphics Accelerator and Advanced Memory Controller
|
Via
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
|
| APD-128G064D |
128 x 64 Graphics Display with Video Interface, DC Converter, Drive Circuitry, Bright, Vivid Graphics, Powerful Software Commands, Flicker Free Screen, Slim Profile
|
Vishay
|
| 82845GE 82845PE 845PE 845GE |
82845GE Graphics and Memory Controller Hub (GMCH) and 82845PE Memory Controller Hub (MCH)
(82845GE / 82845PE) Memory Controller Hub
|
INTEL[Intel Corporation]
|
| APD-256G064 |
256 x 64 Graphics Display with Drive Electronics, TTL Level Data Interface, Large Bright Characters and Graphics, Slim Profile, Highly Visible for Long-Distance Viewing
|
Vishay
|
| APD-128G064A-1 |
128 x 64 Graphics Display with Drive Electronics, TTL Level Data Interface and DC/DC Converter, Highly Visible for Long-Distance Viewing, Slim Profile, Large Bright Characters and Graphics
|
Vishay
|
| APD-192G064-1 |
192 x 64 Graphics Display with Drive Electronics, TTL Level Data Interface, Integrated DC Converter, Slim Profile, Large, Bright Characters and Graphics, Highly Visible for Long-Distance Viewing
|
Vishay
|
| APD-192G096 |
192 x 96 Graphics Display with Drive Electronics, Controller and Serial Interface, Text or Graphics Mode, Very Compact, Wide Viewing Angle, Flicker Free Refresh, Editing Functions, High Brightness
|
Vishay
|
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
| SML80A12 SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| SML80H12 SML100H11 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| AS3668 AS3668-BQFT |
4 Channel Breathl ight Cont rol ler
|
austriamicrosystems AG
|
