| PART |
Description |
Maker |
| UPD4217412V-60 UPD4216412V-60 UPD4216412LE-60 UPD4 |
x4 Static Column Mode DRAM x4静态列模式DRAM
|
Advanced Interconnections, Corp.
|
| HM574256ZP-35R HM574256JP-35R HM574256ZP-40 |
x4 Static Column Mode DRAM x4静态列模式DRAM
|
ON Semiconductor
|
| MCM54402AZ70 MCM54402AN80 MCM54402AT60 MCM54402AN6 |
1M X 4 STATIC COLUMN DRAM, 70 ns, PZIP20
1M X 4 STATIC COLUMN DRAM, 80 ns, PDSO20
1M X 4 STATIC COLUMN DRAM, 60 ns, PDSO20
|
MOTOROLA INC
|
| KM41C466J-10 KM41C466J-7 KM41C466J-8 |
64K X 4 STATIC COLUMN DRAM, 100 ns, PQCC18
64K X 4 STATIC COLUMN DRAM, 70 ns, PQCC18
64K X 4 STATIC COLUMN DRAM, 80 ns, PQCC18
|
|
| H55S1222EFP-60E H55S1222EFP-60M H55S1222EFP-75E H5 |
128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
4M X 32 STATIC COLUMN DRAM, 5.4 ns, PBGA90
|
HYNIX SEMICONDUCTOR INC
|
| M5M44258-10 M5M44258-7 M5M44258-8 M5M44258BP M5M44 |
STATIC COLUMN MODE 1048576-BIT (262144-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Semiconductor
|
| UPD42S4810AG5-60 UPD42S4810AG5-70 UPD42S4810AG5-80 |
3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM
x8 Fast Page Mode DRAM
x8FastPageModeDRAM
|
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| MT4C16270 |
DRAM 256K X 16 DRAM 5V / EDO PAGE MODE
|
Micron Technology
|
| IS41C44002-50TI IS41LV44002-50T IS41C44004-50T IS4 |
4M x 4 DRAM With EDO Page Mode(3.3V,4M x 4 带扩展数据输出页模式动态RAM(刷新 2K 4米4的DRAM与江户页面模式（3.3伏，4米4带扩展数据输出页模式动态随机存储器（刷k）的
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
|
Integrated Silicon Solution, Inc.
|
