| PART |
Description |
Maker |
| FMM50-025TF |
Trench Gate HiperFET N-Channel Power MOSFET
|
IXYS Corporation
|
| IXFP102N15T IXFH102N15T IXFA102N15T |
Trench Gate Power MOSFET HiperFET
|
IXYS Corporation
http://
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| IXFT86N30T |
Trench HiperFET Power MOSFET
|
http://
|
| FT0018 FT0018-15 |
N-Channel Trench Gate MOSFET
|
Solid States Devices, Inc
Solid States Devices, I...
|
| PSTG25HTT12 |
Powerline N-Channel Trench Gate-IGBT Triple Module
Powerline N-Channel Trench Gate-IGBT Module
Powerline N-Channel Trench Gate- IGBT Triple Module
|
Powersem GmbH
|
| SFF85N06Z SFF85N06M |
55 AMP (note 1) /60 Volts 7 mO N-Channel Trench Gate MOSFET
|
SSDI[Solid States Devices, Inc]
|
| IXTQ50N25T IXTP50N25T IXTA50N25T IXTH50N25T |
Trench Gate Power MOSFET N-Channel Enhancement Mode
|
IXYS Corporation
|
| CM100TU-12F |
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 100 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 100 Amperes/600 Volts
240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
| IXFM6N90 IXFH6N100 IXFH6N90 IXFM6N100 |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电2.0Ω的N沟道增强HiPerFET功率MOSFET) 6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
