| PART |
Description |
Maker |
| APT19F100J |
1000V, 19A, 0.46Ω Max, trr ?70ns
|
Microsemi Corporation
|
| APT29F100B2 APT29F100L |
1000V, 29A, 0.46Ω Max, trr ?70ns N-Channel FREDFET
|
Microsemi Corporation
|
| STR-BS6301 STRS6301 STR-S6301 |
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns;
SWITCHING REGULATOR HYRRTD lC
|
Sanken Electric Co.,Ltd.
|
| APT26F120B2 APT26F120L |
N-Channel FREDFET 1200V, 26A, 0.65Ω Max, trr ?35ns
N-Channel FREDFET 1200V, 26A, 0.65ヘ Max, trr ÷335ns
|
Microsemi Corporation
|
| STP19NB20 STP19NB20FP STB19NB20-1 |
N-CHANNEL 200V - 0.15ohm - 19A - TO-220/TO-220FP/I2PAK PowerMESH?/a> MOSFET
N-CHANNEL 200V - 0.15ohm - 19A - TO-220/TO-220FP/I2PAK PowerMESH⑩ MOSFET
N-CHANNEL 200V - 0.15ohm - 19A - TO-220/TO-220FP/I2PAK PowerMESH MOSFET
N-CHANNEL 200V 0.5 OHM 19A TO-220/TO-220FP/I2PAK POWERMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| Z88C00-20VSC Z88C00-25VEC Z88C00-20VEC Z88C01-25VE |
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA; Holding Current:35mA RoHS Compliant: Yes
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:100mA; Package/Case:3-TO-218X; Current, It av:40A; Gate Trigger Current Max, Igt:100mA
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:V-PAK; Current, It av:6A; Gate Trigger Current Max, Igt:35mA
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Holding Current:50mA; Leaded Process Compatible:Yes RoHS Compliant: Yes
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:4A; Holding Current:30mA
Microcontroller 微控制器
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:100mA; Package/Case:3-TO-218; Current, It av:40A; Gate Trigger Current Max, Igt:100mA 8位微控制
|
Maxim Integrated Products, Inc.
|
| 20687-01 20687 |
CONNECTOR HSG, 3PIN, 19A, 600V UNIVERSAL PLUG
|
VICOR[Vicor Corporation]
|
| 20688-01 20688 |
CONNECTOR HSG, 2 PIN, 19A, 600V UNIVERSAL PLUG
|
VICOR[Vicor Corporation]
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| RJK5014DPP-E0 |
500V - 19A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| GP19NC60W STGP19NC60W |
N-channel 600V - 19A - TO-220 Ultra fast PowerMESH IGBT
|
STMicroelectronics
|
| LT1363CS8TRPBF |
70MHz, 1000V/µs Op Amp; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C OP-AMP, 2000 uV OFFSET-MAX, 50 MHz BAND WIDTH, PDSO8
|
Linear Technology, Corp.
|
|
