| PART |
Description |
Maker |
| 3DD4460 3DD4460-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD4460 FOR LOW FREQUENCY
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD4460 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5606 |
CASE-RATED BIPOLAR TRANSISTOR
|
JILIN SINO-MICROELECTRONICS
|
| 3DD5017 3DD5017-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5606-O-Z-N-C |
CASE-RATED BIPOLAR TRANSISTOR 3DD5606 FOR LOW FREQUENCY AMPLIFICATION
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD2101 3DD2101-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2101 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5039 3DD5039-O-HF-N-B |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5039 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD2901-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2901 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 2N5832 |
NPN Transistor Plastic-case Bipolar
|
Micro Commercial Compon...
MCC[Micro Commercial Components]
|
| HDMP-1014 HDMP-1012 |
Bipolar Transistor; Collector Emitter Voltage, Vceo:400V; Transistor Polarity:N Channel; Power Dissipation:250W; C-E Breakdown Voltage:400V; DC Current Gain Min (hfe):10; Collector Current:50A; Package/Case:TO-3
Phase Lock Loop (PLL) IC; Number of Circuits:1; Package/Case:14-DIP; Mounting Type:Through Hole 4Low成本千兆速率发接收芯片
|
Agilent(Hewlett-Packard)
|
| IRGPC40K 1982 |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
From old datasheet system
|
IRF[International Rectifier]
|
| 2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor
Bipolar Transistor Adoption of FBET, MBIT processes
Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| IRGBC30K-S |
Aluminum Polymer SMT Capacitor; Capacitance: 150uF; Voltage: 4V; Case Size: 6.3x6 mm; Packaging: Tape & Reel
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)
|
IRF[International Rectifier]
|
