| PART |
Description |
Maker |
| MTP1N60E |
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
|
| MUX08AQ_883C MUX08BQ_883C MUX08EP |
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected)
|
Analog Devices
|
| APT40N60B2CFG APT40N60B2CF APT40N60LCF APT40N60LCF |
40 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Super Junction FREDFET 40 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi, Corp.
Advanced Power Technology
|
| S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1)
Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
| STF9NM60N STP9NM60N |
N-channel 600 V, 0.63 Ohm, 6.5 A TO-220FP MDmesh(TM) II Power MOSFET
N-channel 600 V, 0.63 Ohm, 6.5 A TO-220 MDmesh(TM) II Power MOSFET
|
ST Microelectronics
|
| S4402 |
MOSFET, Switching; VDSS (V): 600; ID (A): 16; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.475; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
| STU6N60M2 STF6N60M2 STP6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
ST Microelectronics
|
| NDF10N60ZG |
10A 600V 0.65 Ohm Single N-Channel TO-220FP MOSFET 6 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
ON Semiconductor
|
| FSF450R4 FSF450D FSF450D1 FSF450D3 FSF450R FSF450R |
9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 9 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| STP9N60M2 STD9N60M2 |
Extremely low gate charge
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
STMicroelectronics
ST Microelectronics
|
| FQU5N60C FQU5N60CTU FQD5N60C FQD5N60CTM |
N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Ohm
|
Fairchild Semiconductor
|
|
