| PART |
Description |
Maker |
| M27V322-100F1 M27V322-150XP6 M27V322 M27V322-100B1 |
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM
Fuses, 150mA 250V SB 5X15 BULK
32 Mbit 2Mb x16 Low Voltage UV EPROM and OTP EPROM 32兆位Mb x16低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27C322 |
32 MBIT (2MB X16) UV EPROM AND OTP EPROM
|
ST Microelectronics
|
| M29KW032E90ZA6T M29KDCL3-32T M29KW032E M29KW032E11 |
From old datasheet system
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory
32 Mbit 2Mb x16 / Uniform Block 3V Supply LightFlash Memory
32 MBIT (2MB X16, UNIFORM BLOCK)3V SUPPLY LIGHTFLASHMEMORY
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash Memory
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27C202-100B1TR M27C202-100B3TR M27C202-100B6TR M2 |
From old datasheet system
2 Mbit (128Kb x16) UV EPROM and OTP EPROM
CAP .18UF 400V POLYPROPYLENE
RES 200-OHM 5% 0.063W 200PPM THK-FILM SMD-0402 TR-7-PA2MM
2 Mbit 128Kb x16 UV EPROM and OTP EPROM 2兆位存储28KB的x16紫外线和OTP存储
8-Pin SOIC Dual-Channel Low Current High Gain Split Darlington Output Optocoupler 2兆位存储28KB的x16紫外线和OTP存储
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
HIROSE ELECTRIC Co., Ltd.
|
| M29KDCL3-32T M29KW032E110N1T M29KW032E110N3T M29KW |
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlashMemory 32兆位Mb x16插槽，统一V电源LightFlash⑩记
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash?/a> Memory
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash Memory
|
STMicroelectronics N.V.
意法半导
|
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36DR432AD M36DR432AD10ZA6T M36DR432AD12ZA6T M36DR |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M36W432BG M36W432BG70ZA1T M36W432BG70ZA6T M36W432B |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M36W432 M36W432B M36W432B70ZA1T M36W432B70ZA6T M36 |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M27V400 M27V400-100B1TR M27V400-100B6TR M27V400-10 |
NND - 4 MBIT (512KB X8 OR 256KB X16) UV EPROM AND OTP EPROM
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| M36W832TE8 M36W832TE M36W832BE70ZA6T M36W832BE70ZA |
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
32 Mbit 2Mb x16 Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M27V160 M27V160-100B1TR M27V160-100B6TR M27V160-10 |
CAP .47UF 250/275VAC ECQ-UL 16兆位Mb x8兆x16低压紫外线可擦写可编程只读存储器和OTP存储
2.5-V/3.3-V 16-Bit Bus Transceivers With 3-State Outputs 48-TSSOP -40 to 85 16兆位Mb x8兆x16低压紫外线可擦写可编程只读存储器和OTP存储
16 Mbit 2Mb x8 or 1Mb x16 Low Voltage UV EPROM and OTP EPROM 16兆位Mb x8兆x16低压紫外线可擦写可编程只读存储器和OTP存储
2.5-V/3.3-V 16-Bit Buffers/Drivers With 3-State Outputs 48-SSOP -40 to 85 16兆位Mb x8兆x16低压紫外线可擦写可编程只读存储器和OTP存储
|
STMicroelectronics N.V.
ST Microelectronics
|
