PART |
Description |
Maker |
PTF10009 |
85 Watts, 1.0 GHz GOLDMOS?/a> Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor 85 Watts, 1.0 GHz GOLDMOSField Effect Transistor 85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics ERICSSON[Ericsson]
|
SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
STD4525NL STU4525NL |
N-Channel Enhancement Mode Field Effect Transistor Dual N-Channel E nhancement Mode Field Effect Transistor
|
SamHop Microelectronics
|
SSM3K02F |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 东芝场效应晶体管频道马鞍山类 Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
|
Toshiba Corporation Toshiba, Corp. Toshiba Semiconductor
|
2SK3078A |
Field Effect Transistor Silicon N Channel MOS Type VHF/UHF Band Amplifier Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
2SK3387 |
Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Switching Regulator, DC-DC Converter and Motor Drive Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) 东芝场效应晶体管频道马鞍山型(二π- MOSV From old datasheet system
|
PMC-Sierra, Inc. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦,1.0 GHz的GOLDMOS场效应晶体管 35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
PTF10154 |
85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85瓦,1.93-1.99 GHz的GOLDMOS场效应晶体管 85 Watts 1.93-1.99 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
TPC8401 |
80 AMP MINI-ISO AUTOMOTIVE RELAY TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII) TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII) TOSHIBA Field Effect Transistor Silicon N/ P Channel MOS Type (U−MOSII)
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
PTF102027 |
40 Watts, 92560 MHz GOLDMOS Field Effect Transistor 40 WATTS, 925-960 MHZ GOLDMOS FIELD EFFECT TRANSISTOR
|
Ericsson Microelectronics
|
TPC8104-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
|
Toshiba Corporation Toshiba Semiconductor
|
2SK3407 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
|
Toshiba Semiconductor
|