PART |
Description |
Maker |
JSPHS-446 |
Narrow Band Phase Shifter 50ohm 180 Voltage Variable 366 to 446 MHz
|
Mini-Circuits
|
JSPHS-150 |
Narrow Band Phase Shifter 50ohm 180 Voltage Variable 100 to 150 MHz
|
Mini-Circuits
|
TOAT-3610 |
Digital Step Attenuator, 50ohm TTL Control, Pin Diode 10 to 1000 MHz 10 MHz - 1000 MHz RF/MICROWAVE VARIABLE ATTENUATOR
|
Mini-Circuits
|
IRFR9014 IRFU9014 IRFR9014TRL |
HEXFET Power MOSFET HEXFET功率MOSFET -60V Single P-Channel HEXFET Power MOSFET in a D-Pak package -60V Single P-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=-60V Rds(on)=0.50ohm Id=-5.1A) Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 5.1A
|
IRF[International Rectifier] Samsung semiconductor International Rectifier, Corp.
|
142-06J08SL 144-06J12L 143-16J12SL 142-06J08L 143- |
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.22 uH - 0.248 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.193 uH - 0.306 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.638 uH - 0.801 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.275 uH - 0.355 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.315 uH - 0.423 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.115 uH - 0.121 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.382 uH - 0.422 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.391 uH - 0.493 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.355 uH - 0.477 uH, VARIABLE INDUCTOR RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.693 uH - 0.846 uH, VARIABLE INDUCTOR
|
Coilcraft, Inc. COILCRAFT INC
|
MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP |
360 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 550 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14 250 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 175 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE 120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
IRF9Z14 |
-60V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
|
IRF[International Rectifier]
|
558-1192 558-1192-09-00-00 558-1192-11-00-00 558-1 |
Variable Coil, Shielded, Vertical, .080μH thru 1.20mΗ SHIELDED, 1.8 uH - 2.7 uH, VARIABLE INDUCTOR SHIELDED, 3.9 uH - 5.6 uH, VARIABLE INDUCTOR SHIELDED, 0.39 uH - 0.56 uH, VARIABLE INDUCTOR
|
CAMBION Electronic Components WEARNES CAMBION LTD
|
L7BRS-1765Z |
Variable Coils UNSHIELDED, 100 uH - VARIABLE INDUCTOR
|
TOKO, Inc.
|
165-05A06S 164-04A06 165-04A06S |
NOT RoHS. RF inductor, tunable, aluminum core, shielded (add 'L' for compliant version) SHIELDED, 0.043 uH - 0.05 uH, VARIABLE INDUCTOR UNSHIELDED, 0.052 uH - 0.077 uH, VARIABLE INDUCTOR SHIELDED, 0.035 uH - 0.041 uH, VARIABLE INDUCTOR
|
Coilcraft, Inc. COILCRAFT INC
|
AV112-12 |
HIP3 Variable Attenuator 1.7-2.0 GHz 1700 MHz - 2000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.5 dB INSERTION LOSS-MAX HIP3 Variable Attenuator 1.7-2.0 GHz
|
Skyworks Solutions, Inc.
|
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