| PART |
Description |
Maker |
| STB4NB80 STB4NB80FP 5976 |
N - CHANNEL 800V - 3 Ohm - 4A - PowerMESH MOSFET
From old datasheet system
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET
N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET)
N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N沟道MOSFET) N沟道800V3Ω- 4A条，TO-220/TO-220FP PowerMESHTM MOSFET的（不适用沟道MOSFET的）
|
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| STB7NC80Z STB7NC80Z-1 STP7NC80ZFP STP7NC80Z STBB7N |
6.5 A, 800 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL MOSFET
New Generation Twisted Paired Multiconductor Audio Cable; Number of Conductors:4; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
N-CHANNEL 800V - 1.3 OHM - 6.5A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| FQA10N80C |
800V N-Channel MOSFET
800V N-Channel Advance Q-FET C-Series
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| FQP7N80C FQPF7N80C |
CONN 26POS 2MM SOCKET R/A PC MT
800V N-Channel Advance Q-FET C-Series
800V N-Channel MOSFET
CONN 26POS 2MM SOCKET STR PC SMD 6.6 A, 800 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRFIBE30G IRFIBE30 |
800V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=800V/ Rds(on)=3.0ohm/ Id=2.1A)
Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=2.1A)
|
IRF[International Rectifier]
http://
|
| IRFK4HE50 |
800V,26A,N-Channel HEXFET Power MOSFET(800V,26A,N沟道 HEXFET 功率MOS场效应管) 800V的，26A，N沟道HEXFET功率MOSFET00V的，26A条，沟道的HEXFET功率马鞍山场效应管）
|
International Rectifier, Corp.
|
| STH6NA80FI 2998 STW6NA80 |
N-CHANNEL MOSFET
N - CHANNEL 800V - 1.8 - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IRFBE30 IRFBE30PBF |
800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A)
Power MOSFET(Vdss=800V/ Rds(on)=3.0ohm/ Id=4.1A)
|
International Rectifier
|
| STP5NB80 STP5NB80FP 6418 |
From old datasheet system
N - CHANNEL 800V - 1.8W - 5A - TO-220/TO-220FP
PowerMESH] MOSFET
N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| 2SK956 2SK1010 2SK1507-01 2SK958 2SK1547-01 2SK138 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-247 晶体管| MOSFET的| N沟道| 800V的五（巴西）直| 4A条（丁）|47
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 6A条（丁）|20
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-247
MOSFET transistors
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 9A I(D) | TO-247
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
From old datasheet system
TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,9A I(D),TO-220
TRANSISTOR|MOSFET|N-CHANNEL|500VV(BR)DSS|6AI(D)|TO-220
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,9A I(D),TO-247
|
Toshiba, Corp.
Mallory Sonalert Products, Inc.
Fuji Semiconductors, Inc.
|
| STP4NB80 STP4NB80FP |
N-CHANNEL 800V - 3 OHM - 4A - TO-220/TO-220FP POWERMESH MOSFET
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
