| PART |
Description |
Maker |
| OLD122CP3 OPU850CP OLD122CP3_222CP |
LED Capsule(LED 浼???????))
LED Capsule(瓶帽LED ，特别适合用作图文检测的传感 发光二极管胶囊（瓶帽状的LED，特别适合用作图文检测的传感器）
LED Capsule(LED 传感膜片)) 胶囊的LED（发光二极管传感器（膜片））
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
| WK32 |
Liquid cooling for capsule devices
Liquid cooling for capsule devices
|
SEMIKRON
Semikron International
|
| WK31 WK33 WK32 |
Liquid cooling for capsule devices
Liquid cooling for capsule devices
|
SEMIKRON
Semikron International
|
| DS9107 |
iButton Capsule
|
Maxim Integrated Products
|
| SHXXC760 |
Capsule Type Rectifier Diode
|
Hind Rectifiers Limited.
|
| SHXXC1850 |
Capsule Type Rectifier Diode
|
Hind Rectifiers Limited.
|
| PT2270 PT2270-L2-S PT2270-L2 PT2270-L3 PT2270-L3-S |
HEATSINK CPU 28MM SQBLK W/O TAPE
HEATSINK CPU 28MM SQ BLK W/TAPE
Remote Control Decoder 遥控解码
|
http://
Princeton Technology Corporation
Princeton Technology, Corp.
|
| PJ3100 |
7V; 300mA CMOS LDO with enable. For battery-powered devices, personal communication devices
|
PROMAX-JOHNTON
|
| EPC1064V EPC1213 EPC1441 |
Configuration Devices for ACEX/ APEX/ FLEX & Mercury Devices
|
Altera Corporation
|
| EPC1 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM050F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
