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IXGP16N60B2D1 - HiPerFAST IGBTs B2-Class High Speed w/ Diode

IXGP16N60B2D1_634048.PDF Datasheet


 Full text search : HiPerFAST IGBTs B2-Class High Speed w/ Diode


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IGW03N120H2NBSP IGP03N120H2NBSP IGB03N120H2NBSP IG High Speed CMOS Logic Hex Non-Inverting Buffers 16-SOIC -55 to 125 高 -技
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The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs
ADPOW[Advanced Power Technology]
APT15GT60BR The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 31A
ADPOW[Advanced Power Technology]
IXGH32N60AU1S IXGH32N60AU1 HiPerFAST IGBT with Diode(VCES涓?00V锛?CE(sat)涓?.9V??iPerFAST缁????????浣??(甯?????锛?
HiPerFAST IGBT with Diode Combi Pack
IXYS[IXYS Corporation]
APT40GF120JRD The Fast IGBTis a new generation of high voltage power IGBTs ⑩的快速IGBT是一种高压IGBT的新一
The Fast IGBT is a new generation of high voltage power IGBTs
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IXGH24N60CD1 IXGT24N60CD1 Lightspeed Series HiPerFAST IGBT with Diode(VCES涓?00V锛?CE(sat)涓?.5V??iPerFAST缁????????浣??(甯?????锛?
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HiPerFAST IGBT with Diode Lightspeed Series
IXYS Corporation
APT50GF120JRD Fast IGBT & FRED 1200V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.
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APT50GF60B2RD APT50GF60LRD Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
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Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
 
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