PART |
Description |
Maker |
HYB3118165BST-50 HYB5118165BST-50 HYB3118165BSJ-60 |
High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 1M X 16 EDO DRAM, 50 ns, PDSO44 1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷 1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模) 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16动RAM)
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Siemens Semiconductor Group SIEMENS AG
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HYB514400BJ-50- Q67100-Q756 Q67100-Q973 HYB514400B |
RES 12K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA 4M × 1-Bit Dynamic RAM(4M × 1位动态RAM) 1M x 4-Bit Dynamic RAM 100万4位动态随机存储器
|
SIEMENS AG
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HYB514405BJL HYB514405BJ-60 Q67100-Q2116 |
1M x 4-Bit Dynamic RAM(1M x 4-位动RAM (超级页面EDO模式)) RES 1.3K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA 1M X 4 EDO DRAM, 60 ns, PDSO20 1M x 4-Bit Dynamic RAM 100万4位动态随机存储器
|
SIEMENS AG
|
TC514100AAZL-10 TC514100AAZL-70 TC514100AAZL-80 TC |
Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:32-15 RoHS Compliant: No 4,194,304 WORD x BIT DYNAMIC RAM 4194304 WORD x BIT DYNAMIC RAM
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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THM361020S-10 THM361020S-80 THM361020SG-10 THM3610 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 1048576 WORDS x 36 BIT DYNAMIC RAM MODULE 1,048,576 WORDS x 36 BIT DYNAMIC RAM MODULE 1/048/576 WORDS x 36 BIT DYNAMIC RAM MODULE
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
HYB5117405BT-70 HYB5117405BT-60 HYB5117405BT-50 HY |
-4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode- EDO) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
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HYB5116405BJ-50 HYB5116405BJ-60 HYB5117405BJ-70 HY |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M X 4 EDO DRAM, 70 ns, PDSO24 POWERLINE: RP12-S_DA - 2:1 Wide Input Voltage Range- 12 Watts Output Power- 1.6kVDC Isolation- Over Current Protection- Five-Sided Continuous Shield- Standard DIP24 and SMD-Pinning- Efficiency to 88% 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS A G SIEMENS AG http:// Siemens Semiconductor G...
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HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24 High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO)) 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO)) 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
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SIEMENS AG http:// Siemens Semiconductor Group
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HYB5117800BSJ-60 HYB5117800BSJ-50 HYB5117800-60 HY |
2M x 8 Bit 2k 5 V 60 ns FPM DRAM 2M x 8 Bit 2k 3.3 V 60 ns FPM DRAM 2M x 8 Bit 2k 3.3 V 50 ns FPM DRAM 2M x 8 - Bit Dynamic RAM 2k Refresh (Fast Page Mode) 2M x 8-Bit Dynamic RAM From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
Q67100-Q973 HYB514400BJ HYB514400BJ-50 HYB514400BJ |
1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM
|
SIEMENS[Siemens Semiconductor Group]
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