| PART |
Description |
Maker |
| SBT80-06GS |
60V, 8A Rectifi er
|
Sanyo Semicon Device
|
| SBT80-10GS |
100V, 8A Rectifi er
|
Sanyo Semicon Device
|
| APT30DL60BCT APT30DL60BCTG |
Ultrasoft Recovery Rectifi er Diode
|
Microsemi Corporation
|
| APT2X101DL40J |
Ultrafast Soft Recovery Dual Rectifi er Diode
|
Microsemi Corporation
|
| CBRHDSH1-200 CBRLD1SERIES |
SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER
1.0A, 40V thru 200V Schottky Bridge Rectifier in the HD DIP package
1.0A, 200V thru 1000V Bridge Rectifi ers
|
Central Semiconductor Corp
|
| P0406FC12C P0406FC3.3C P0406FC08C P0406FC05C P0406 |
FLIP CHIP ARRAY
250 W, BIDIRECTIONAL, 6 ELEMENT, SILICON, TVS DIODE ROHS COMPLIANT, 0406, FLIP CHIP-6
|
List of Unclassifed Manufacturers
ETC[ETC]
PROTEC[Protek Devices]
|
| CP305 |
Chip Form: SILICON TRANSISTOR
Small Signal Transistor NPN - High Current Transistor Chip
|
CENTRAL[Central Semiconductor Corp]
|
| MPXM2202 MPXM2202A MPXM2202AS MPXM2202AST1 MPXM220 |
200kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors(200kPa片内温度补偿和校准硅压力传感
200 KPA ON CHIP TEMPERATURE COMPENSATED & CALIBRATED SILICON PRESSURE SENSORS
|
Motorola, Inc.
飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
|
| CP617 |
Small Signal Transistor PNP - Silicon RF Transistor Chip
Chip Form: RF TRANSISTOR
|
Central Semiconductor Corp
|
| TPCP8J0107 |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
|
Toshiba Semiconductor
|
