| PART |
Description |
Maker |
| K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| AD8512ARMZ AD8510ARMZ-REEL AD8510BR AD8510ARZ AD85 |
Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifier (Dual); No of Pins: 8; Temperature Range: Industrial DUAL OP-AMP, 1800 uV OFFSET-MAX, 8 MHz BAND WIDTH, PDSO8
Precision, Very Low Noise, Low Input Bias Current
|
Analog Devices, Inc.
|
| OP270 OP-270 OP-270ARC_883 OP-270AZ OP-270EZ OP-27 |
DUAL VERY LOW NOISE PRECISION OPERATIONAL AMPLIFIER
DUAL OP-AMP, 150 uV OFFSET-MAX, 5 MHz BAND WIDTH, CDIP8
DUAL VERY LOW NOISE PRECISION OPERATIONAL AMPLIFIER DUAL OP-AMP, 175 uV OFFSET-MAX, 5 MHz BAND WIDTH, CQCC20
18V; 25mA; dual very low-noise precision operational amplifier
|
ANALOG DEVICES INC
AD[Analog Devices]
Analog Devices, Inc.
|
| K4S643232C-TC/L80 K4S643232C-TC/L10 K4S643232C-TC/ |
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC 200万32内存12k × 32 × 4银行同步DRAM LVTTL
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 200万32内存12k × 32 × 4银行同步DRAM LVTTL
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP -40 to 85
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC -40 to 85
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 29W040 M29W040 M29W040-120K5TR M29W040-100K5TR M29 |
4 Mbit 512Kb x8 / Uniform Block Low Voltage Single Supply Flash Memory
Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-SOIC
Dual Low-Noise High-Speed Precision Operational Amplifier 8-SOIC
High Speed High Drive Precision Operational Amplifier 8-CDIP -55 to 125
Excalibur Low-Noise High-Speed Precision Dual Operational Amplifier 8-SOIC
High Speed High Drive Precision Dual Operational Amplifier 8-CDIP -55 to 125
; Capacitance:180pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V; Package/Case:1210; Series:SQ; Dielectric Material:Ceramic; Leaded Process Compatible:Yes; Mounting Type:PCB Surface Mount
High Speed High Drive Precision Dual Operational Amplifier 20-LCCC -55 to 125 4兆位512KB的8，统一座低电压单电源闪
CAP RF 2.0PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory 4兆位512KB的8，统一座低电压单电源闪
CAP RF 27PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
CAP RF 1.8PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
CAP RF 24PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
CAP RF 22PF 250V 0603 SMD 4兆位512KB的8，统一座低电压单电源闪
High Speed High Drive Precision Dual Operational Amplifier 8-SOIC
CAP RF 1.0PF 250V 0603 SMD
Excalibur Low-Noise High-Speed Precision Operational Amplifier 8-PDIP 0 to 70
Dual Low-Noise High-Speed Precision Operational Amplifier 8-PDIP
512K X 8 FLASH 3V PROM, 150 ns, PQCC32
512K X 8 FLASH 3V PROM, 200 ns, PDSO32
512K X 8 FLASH 3V PROM, 120 ns, PQCC32
|
意法半导
STMicroelectronics N.V.
|
| ADR292 ADR290FR ADR292FR ADR290ER-RELL ADR290FR-RE |
18V; low noise micropower precision voltage reference. For portable instrumentation, precision reference for 3 or 5V systems
Precision, Micropower 2.5 V XFET(TM) Reference
Precision, Micropower 4.096V XFET Reference
Precision, Micropower 2.048 V XFET Reference
Low Noise Micropower
2.048 V, 2.5 V, and 4.096 V
Precision Voltage References
Low Noise Micropower Precision Voltage References 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 4.096 V, PDSO8
Low Noise Micropower Precision Voltage References 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.5 V, PDSO8
Low Noise Micropower Precision Voltage References 低噪声微精密电压基准
Low Noise Micropower Precision Voltage References 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.048 V, PDSO8
|
AD[Analog Devices]
Analog Devices, Inc.
|
| 5962-9317703MYX 5962-9317703MXX 5962-9317701MXX 59 |
x9 Asynchronous FIFO
Single/Dual/Quad, 28MHz, Low-Noise, Low-Voltage, Precision Op Amps X9热卖异步FIFO
|
Omron Electronics LLC Industrial Automation
|
| ISL70227MHEVAL1Z |
Precision Single and Dual Low Noise Operational Amplifiers
|
Renesas Electronics Corporation
|
| HA7-5222_883 HA-5222_01 HA-522201 |
Dual, Low Noise, Wideband, Precision Operational Amplifier
|
INTERSIL[Intersil Corporation]
|
| LT1028A LT1128A LT1028CSW |
Ultralow Noise Precision High Speed Op Amps
Unity Gain Stable Ultra-Low Noise Precision High Speed Op Amp
Ultra Low Noise Precision High Speed Op Amps
|
Linear Technology
|
| HCA10009 |
100MHz/ Single and Dual Low Noise/ Precision Operational Amplifier
100MHz, Single and Dual Low Noise, Precision Operational Amplifier
|
INTERSIL[Intersil Corporation]
|
| HA-5137A |
Op Amp, 63MHz, Precision, Ultra-Low Noise, Minimum Gain of 5
63MHz/ Ultra-Low Noise Precision Operational Amplifier
|
Intersil Corporation
|
