| PART |
Description |
Maker |
| MIE-514A4 514A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| 144A1 MIE-144A1 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE 的AlGaAs /砷化镓大功率角度看包装红外发光二极管
|
Unity Opto Technology Co., Ltd.
|
| MIE-334A4 334A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-144G1 144G1 |
Infrared Emitting Diodes (IRED)
GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TSUS4300 |
GaAs Infrared Emitting Diode in ?3 mm (T-1) Package
GaAs Infrared Emitting Diode in 庐3 mm (T-1) Package
GaAs Infrared Emitting Diode in ?3 mm (T-1) Package
From old datasheet system
|
VISAY[Vishay Siliconix]
|
| LNA2603F 0847 LN155 LNA2603FLN155 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
Infrared Light Emitting Diodes
From old datasheet system
GaAs Infrared Light Emitting Diode
|
Panasonic Corporation
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| SEP8506-001 |
SEP Series GaAs Infrared Emitting Diode, Side-emitting
|
Honeywell Accelerometer...
|
| 1N6264 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| SE2460 |
GaAs Infrared Emitting Diode
|
Honeywell Solid State E...
|
| LN66LLN66L LN66L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
LN66L (LN66(L)) - GaAs Infrared Light Emitting Diode
|
Panasonic
|
| TSUS520_07 TSUS520 TSUS5200 TSUS5201 TSUS5202 |
Infrared Emitting Diode, 950 nm, GaAs
|
VISAY[Vishay Siliconix]
|
