| PART |
Description |
Maker |
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| N25Q128A13BF840E N25Q128A23BF840E N25Q128A33BF840E |
16M X 8 FLASH 3V PROM, PDSO16
16M X 8 FLASH 3V PROM, PBGA24
128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
|
| LH28F016SCT-L95 LHF16C17 |
16M Flash Memory 2M (bb8)
16M Flash Memory 2M ()
16M Flash Memory 2M (×8)
|
Sharp Corporation
Sharp Electrionic Components
|
| LHF16KA6 LH28F160S3T-L10 LH28F160S3T-L10A |
Flash Memory 16M (2MB 8/1MB 16) 闪存16M内存MB的/1MB6
Flash Memory 16M (2MB bb 8/1MB bb 16)
Flash Memory 16M (2MB × 8/1MB × 16)
|
Sharp, Corp.
Sharp Corporation
Sharp Electrionic Components
|
| MBM29DL16XBD-90 MBM29DL16XTD-70 MBM29DL16XTD-90 MB |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT Dual Operation
Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation
|
Fujitsu Microelectronics
|
| MBM29DL163TD-90PBT MBM29DL161BD-70PFTN MBM29DL161B |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| LH28F016SCT-L95 |
16M Flash Memory 2M (x8)
|
SHARP
|
| LH28F016SA LH28F016SAT-70 |
16M (1M 】 16, 2M 】 8) Flash Memory
|
Sharp Electrionic Components
|
| LH28F016SCT-L95 LHF16C17 |
16M Flash Memory 2M (】8)
16M Flash Memory 2M (8)
|
SHARP[Sharp Electrionic Components]
|
| LH28F016SAT-70 |
16M (1M × 16, 2M × 8) Flash Memory
16M (1M 16, 2M 8) Flash Memory
|
http://
Sharp Corporation
|
| MBM29SL160BD-10 MBM29SL160BD-10PBT MBM29SL160BD-10 |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT
|
Fujitsu Microelectronics
|
