PART |
Description |
Maker |
MTM8N35 MTM8N40 MTH8N40 MTH8N35 |
(MTH8N35 / MTH8N40) Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
Motorola Semiconductor MOTOROLA[Motorola, Inc]
|
IRFF130 IRFF131 IRFF132 IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
|
General Electric Solid State GE Solid State
|
MAPLST1617-030CF |
RF Power Field Effect Transistor
|
Tyco Electronics
|
MRF18085B MRF18085BLSR3 MRF18085BR3 |
RF Power Field Effect Transistors
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
MTM40N20 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct...
|
MRF8S19140HR3 MRF8S19140HSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor
|
MRF8S18210WHS MRF8S18210WGHSR3 MRF8S18210WHSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MRF1517NT108 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc Freescale Semiconductor...
|
MRF19085 MRF19085LR3 MRF19085LSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3 |
RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
|
UFT150-28 |
RF POWER FIELD-EFFECT TRANSISTOR
|
Advanced Semiconductor, Inc.
|