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K4E660812E-JCL - 8M X 8 EDO DRAM, 45 ns, PDSO32 8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输 (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out

K4E660812E-JCL_449448.PDF Datasheet

 
Part No. K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4E640812E-TC/L K4E660812E-TL45
Description 8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out

File Size 194.12K  /  21 Page  

Maker


Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.



Homepage http://www.samsung.com/Products/Semiconductor/
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 Full text search : 8M X 8 EDO DRAM, 45 ns, PDSO32 8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输 (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
 Product Description search : 8M X 8 EDO DRAM, 45 ns, PDSO32 8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输 (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out


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