PART |
Description |
Maker |
W981616AH W981616AHB1 |
512 x 2 Banks x 16 Bits SDRAM 512K x 2 BANKS x 16 BIT SDRAM From old datasheet system
|
Winbond Electronics
|
VDS6632A4A-6 VDS6632A4A VDS6632A4A-5 VDS6632A4A-55 |
Synchronous DRAM(512K X 32 Bit X 4 Banks) Synchronous DRAM(512K X 32 Bit X 4 Banks) 同步DRAM12k × 32的位× 4个银行)
|
A-DATA[A-Data Technology] ADATA Technology Co., Ltd.
|
HY57V16161 |
2 Banks x 512K x 16 Bit Synchronous DRAM
|
HYNIX
|
M12S64322A-6BG M12S64322A-6TG M12S64322A-7BG M12S6 |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
M12L64322A-5BG M12L64322A-5TG M12L64322A-6BG M12L6 |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
M12L64322A-6TG M12L64322A-5BG |
512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 512K x 32 Bit x 4 Banks Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PBGA90
|
Elite Semiconductor Memory Technology, Inc.
|
HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY |
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50 2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50 SDRAM - 16Mb
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
K4R881869 K4R881869M-NCK8 K4R881869M-NBCCG6 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
MT48LC1M16A1 |
512K x 16 x 2 banks IT SDRAM(512K x 16 x 2同步动态RAM(工业温度))
|
Micron Technology, Inc.
|