PART |
Description |
Maker |
IXFR180N06 |
HiPerFETTM Power MOSFETs 180 A, 60 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
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IXYS, Corp. IXYS[IXYS Corporation]
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IRFP244 IRFP245 IRFP246 IRFP247 |
15A and 14A 275V and 250V 0.28 and 0.34 Ohm N-Channel Power MOSFETs (IRFP244 / IRFP245 / IRFP246 / IRFP247) N-Channel Power MOSFETs 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 15 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
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FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs 70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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INTERSIL[Intersil Corporation]
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IRF101 IRF140-143 IRF142 IRF143 IRF541 IRF543 IRF5 |
N-Channel Power MOSFETs/ 27 A/ 60-100V N-Channel Power MOSFETs, 27 A, 60-100V 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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FAIRCHILD[Fairchild Semiconductor] Samsung semiconductor Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
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MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
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Freescale Semiconductor, Inc MOTOROLA
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IXFN38N100Q2 |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
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IXYS, Corp. IXYS[IXYS Corporation]
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FSYA254R4 FSYA254D FSYA254D1 FSYA254D3 FSYA254R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射,抗SEGR N沟道功率MOSFET Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
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INTERSIL[Intersil Corporation] Intersil, Corp.
|
IXFM12N100 IXFH10N100 IXFH12N100 IXFH13N100 IXFM10 |
HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA HiPerFET Power MOSFETs 12 A, 1000 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD HiPerFET Power MOSFETs 13 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Discrete MOSFETs: HiPerFET Power MOSFETS
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IXYS, Corp. IXYS[IXYS Corporation]
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MRF18085A MRF18085AR3 MRF18085ALSR3 |
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
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http:// MOTOROLA[Motorola, Inc]
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FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0 |
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7A 100V的,0.300欧姆,拉德硬,SEGR性,P通道功率MOSFET 7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA From old datasheet system 3.1A 400V 1.800 Ohm N-Channel Power MOSFETs 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs 0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
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INTERSIL[Intersil Corporation] HARRIS SEMICONDUCTOR
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IXTP3N120 IXTA3N120 IXTP3N110 IXTA3N110 |
Discrete MOSFETs: Standard N-channel Types High Voltage Power MOSFETs
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IXYS[IXYS Corporation]
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