| PART |
Description |
Maker |
| DS1220Y-150-IND DS1220Y-200-IND DS1220Y-100-IND DS |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| M48Z512Y-120PL1NBSP M48Z512Y-120PL1 |
NVRAM (Battery Based)
From old datasheet system
|
ST Microelectronics
|
| DS1330BL-70-IND DS1330BL-100-IND DS1330YL-100 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1245Y-100-IND DS1245Y-120-IND DS1245YP-70 DS1245 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| U632H64BDC45 U632H64BD1C45 U632H64BSC45 U632H64DC4 |
Precision single operational amplifier
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
Glenair, Inc.
|
| M41ST87WMX6 M41ST87WMX6TR M41ST87YMX6 M41ST87YMX6T |
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
STMicroelectronics
|
| M41ST87W11 M41ST87WSS6F |
Serial real-time clock (RTC) supervisor
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
ST Microelectronics
STMicroelectronics
|
| FM24C512 FM24C512-G |
512Kb FRAM Serial Memory
512Kbit Ferroelectric Nonvolatile RAM
|
Ramtron International Corporation
Ramtron Corporation
|
| GN01081B |
GaAs IC with built-in ferroelectric RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
Black Box, Corp.
Panasonic Semiconductor
|
| STK12C68-5S30 STK12C68-5W30 |
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:35mA
NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| M40Z30007 M40Z300 M40Z300MQ1E M40Z300MQ6E M40Z300W |
5V or 3V NVRAM supervisor for up to 8 LPSRAMs
|
STMicroelectronics
|
| M40Z300 M40Z300MH M40Z300MH1 M40Z300MH1TR M40Z300M |
NVRAM CONTROLLER for up to EIGHT LPSRAM
|
ST Microelectronics
STMicroelectronics
|
