| PART |
Description |
Maker |
| BCX52-10 BCX52-16 BCP52-16 BCP52-10 BC52PA |
60 V, 1 A PNP medium power transistors
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
|
NXP Semiconductors
|
| ZTX1149A |
PNP Low Sat Transistor
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
|
ZETEX[Zetex Semiconductors]
Diodes Incorporated
|
| ZXTP19100C ZXTP19100CG ZXTP19100CGTA |
100V PNP medium transistor in SOT223
2 A, 100 V, PNP, Si, POWER TRANSISTOR SOT-223, 4 PIN
|
ZETEX PLC
Diodes Incorporated
Zetex Semiconductors
Diodes, Inc.
|
| ZTX1147A |
PNP Low Sat Transistor
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
|
ZETEX[Zetex Semiconductors]
Diodes Incorporated
|
| CSB1436R CSB1436P CSB1436 |
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 390 hFE.
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126 晶体管|晶体管|进步党| 20V的五（巴西）总裁| 5A条一（c）|26
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 180 hFE.
|
Electronic Theatre Controls, Inc.
Continental Device India Limited
|
| CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O
PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
|
Continental Device India, Ltd.
CDIL[Continental Device India Limited]
Continental Device Indi...
|
| 2N3209DCSM |
Dual High Speed Medium Power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型双PNP晶体管（高可靠性、陶瓷表贴封装）)
DUAL HIGH SPEED/ MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| BC638-16 BC640-16 BC640 BC636 BC636-10 BC636-16 BC |
PNP medium power transistors 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP medium power transistors 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
TRANSISTOR TO-92
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2N2894DCSM |
DUAL HIGH SPEED, MEDIUM POWER, PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
High Speed Medium Power PNP Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型PNP晶体管（高可靠性、陶瓷表贴封装）) 高速中功率开关晶体管进步党在全封闭六窑业表面贴装封装，高可靠性的应用（高速，中等功率，开关型进步党晶体管（高可靠性，陶瓷表贴封装））
|
SemeLAB
SEME-LAB[Seme LAB]
Lumex, Inc.
|
| 2SB1578 2SB1578GB2 2SB1578GB1 2SB1578-GB3 |
5 A, 60 V, PNP, Si, POWER TRANSISTOR
3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 5A条一（c）|43VAR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-243VAR 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 5A条一（c）|43VAR
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
Low freq. power amp., medium-speed switching transistor
|
NEC, Corp.
Panasonic Semiconductor
|
| 2SB1188 2SB1188-E-AB3-R 2SB1188-P-AB3-R 2SB1188-Q- |
MEDIUM POWER LOW VOLTAGE TRANSISTOR 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
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Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
