| PART |
Description |
Maker |
| IRKLF200-04HK IRKHF200-04HK IRKLF200-08HK IRKLF200 |
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/可控硅L结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/二极H结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/可控L结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块00安培V的，快速可控硅/二极结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,12V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块00安培2V的，快速可控硅/二极结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块200安培4V电压，快速可控硅/可控结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,12V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块200安培2V的，快速可控硅/可控结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,8V,蹇?????纭?浜??绠∪缁??MAGN-A-pak???妯″?)
|
International Rectifier, Corp.
|
| SD200N04PV SD200N08PV SD200N16PV SD200N20PC SD200N |
800V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
1600V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
2000V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
2400V 200A Std. Recovery Diode in a DO-205AC (DO-30)package
|
International Rectifier
|
| MIT-5A116 5A116 |
MCCB, 200A, 50KA, 3P, MOTOR PROTECT; Voltage rating, AC:415V ac; Current rating:200A; Poles, No. of:3; Current, breaking capacity AC:50kA; Mounting type:DIN Rail; Length / Height, external:145mm; Width, external:90mm; Depth, RoHS Compliant: Yes
Interrupters (Optical Switch)
SLOTTED PHOTOINTERRUPTER
|
Unity Opto Technology
|
| BUK475-100A BUK475-100B |
PowerMOS transistor Isolated version of BUK455-200A/B(BUK454-200A/B隔离版本的功率MOS场效应管)
PowerMOS transistor Isolated version of BUK455-100A/B
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| PDMC200B12C2 PDMB200B12C1 |
200A 1200V
|
http://
Nihon Inter Electronics Corporation
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| PT200S8 |
DIODE MODULE 200A/800V
|
Nihon Inter Electronics Corporation
|
| MBR200100C MBR20045CT MBR20080CT |
Silicon Schottky Diode, 200A
|
Naina Semiconductor ltd.
|
| PFT2004N |
THYRISTOR MODULE 200A / 400V
|
NIEC[Nihon Inter Electronics Corporation]
|
| PDH2008 PDT2008 |
THYRISTOR MODULE 200A / 800V
|
Nihon Inter Electronics Corporation
|
| PDH20116 |
THYRISTOR MODULE 200A / 1600V
|
Nihon Inter Electronics Corporation
|
| PGH2008AM |
THYRISTOR MODULE 200A / 800V
|
Nihon Inter Electronics Corporation
|
