| PART |
Description |
Maker |
| CM600E2Y-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM1200HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM600HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM1200HB-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM800DZ-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM800HA-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CM1500HC-66R |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
1500 A, 3300 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| SXL-316-TR2 SXL-316-BLK |
800-970 MHz, 50 Ohm power amplifier module. High 3rd order intercept: 52dBm typ. at 850 MHz. Devices per reel 1000. Reel size 13
800-970 MHz, 50 Ohm power amplifier module. High 3rd order intercept: 52dBm typ. at 850 MHz. Devices per reel 100/TRAY.
|
Stanford Microdevices
|
| CM600HB-90H |
Single IGBTMOD?/a> HVIGBT 600 Amperes/4500 Volts
Single IGBTMOD⑩ HVIGBT 600 Amperes/4500 Volts
Single IGBTMOD HVIGBT 600 Amperes/4500 Volts
Single IGBTMODHVIGBT 600 Amperes/4500 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM200HG-130H |
Single IGBTMOD HVIGBT Module 200 Amperes/6500 Volts
|
Powerex Power Semiconductor...
|
