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M5M4V64S20ATP-12 - 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM

M5M4V64S20ATP-12_208680.PDF Datasheet


 Full text search : 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
 Product Description search : 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM


 Related Part Number
PART Description Maker
M5M4V64S20ATP-8 M5M4V64S20ATP-10 M5M4V64S20ATP-12 From old datasheet system
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
MITSUBISHI[Mitsubishi Electric Semiconductor]
M5M4V64S30ATP-10 M5M4V64S20ATP-8A A98007_A M5M4V64 64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
From old datasheet system
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
MK31VT432-10YC 4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M瀛??2浣??姝ュ???AM妯″?)
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字32位同步动态RAM模块) 4194304字32位同步动态随机存储器模块BANK)(4分字× 32位同步动态内存模块)
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字2位同步动态RAM模块)
From old datasheet system
OKI SEMICONDUCTOR CO., LTD.
IBM13N64734HCA 64M x 72 Two-Bank Unbuffered SDRAM Module(64M x 64 2组不带缓冲同步动态RAM模块) 64米72双行缓冲内存模组4米64 2组不带缓冲同步动态内存模块)
International Business Machines, Corp.
IBM13M64734BCA 64M x 72 1 Bank Registered/Buffered SDRAM Module(64M x 72 1组寄缓冲同步动态RAM模块)
IBM Microeletronics
MH4V36AM-6 MH4V36AM-7 FAST PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM 快速页面模50994944位(4194304 - Word6位)动态随机存储器
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
MH4V724AWXJ-6 MH4V724AWXJ-5 MH4V724AWXJ FAST PAGE MODE 301989888 - BIT ( 4194304 - WORD BY 72 - BIT ) DYNAMIC RAM 快速页面模01989888 -位(4194304 - Word2 -位)动态随机存储器
From old datasheet system
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
MH4S64BBKG-7 MH4S64BBKG-8L MH4S64BBKG-10 MH4S64BBK 268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM 268435456位(4194304 -文字4位)SynchronousDRAM
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
UPD23C64300F9-XXX-BC3 UPD23C64300 UPD23C64300F9-BC 64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) 6400位掩膜可编程ROM00万字位(字节模式 4分字6位(字模式)
CAP 3.6PF 16V /-0.1PF THIN-FILM SN90/PB10/NI 30PPM TR-7-PA
NEC, Corp.
NEC Corp.
NEC[NEC]
UPD4564323 UPD4564323G5-A10-9JH UPD4564323G5-A10B- 64M-bit Synchronous DRAM 4-bank LVTTL
64M-bit Synchronous DRAM 4-bank, LVTTL
NEC[NEC]
D4564841G5 UPD4564441 UPD4564163 UPD4564841 64M-bit Synchronous DRAM 4-bank, LVTTL
Elpida Memory, Inc.
K8D6316UBM-LC09 K8D6316UBM-LI09 K8D6316UBM-PI07 K8 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
SAMSUNG SEMICONDUCTOR CO. LTD.
 
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