| PART |
Description |
Maker |
| K4H510838C-UCB3 K4H510438C-UCB0 K4H510438C-ULA2 K4 |
512MB C-DIE DDR SDRAM SPECIFICATION
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4H510438D K4H510438D-UC_LA2 K4H510438D-UC_LB0 K4H |
512MB D-DIE DDR SDRAM SPECIFICATION
|
SAMSUNG[Samsung semiconductor]
|
| K4H510438D-UC/LA2 K4H510838D-UC/LA2 K4H511638D-UC/ |
512Mb D-die DDR SDRAM Specification
|
Samsung semiconductor
|
| K4H510838C-ZCCC K4H510438C-ZCCC K4H510838C-ZCB3 K4 |
512Mb C-die DDR SDRAM Specification 荤的512Mb芯片DDR SDRAM内存规格
CAP 0.01UF 1000V 10% X7R SMD-1812 TR-13 FLEXITERM
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5DU12422CLTP HY5DU12422CLTP-X HY5DU121622CTP-X H |
CAP.00047UF 16V PPS FILM 0603 2%
512Mb DDR SDRAM 产品512Mb DDR SDRAM
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| W3EG7264S-AD4 |
512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL 512MB 2x32Mx72的DDR ECC的内存缓冲瓦锁相
|
Optrex America, Inc.
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M470L6524DU0-LCC M470L2923DV0-CA2 M470L2923DV0-CB0 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
| K4T51043QJ |
512Mb J-die DDR2 SDRAM
|
Samsung
|
| K4T51163QB K4T51163QB-GCCC K4T51163QB-GCD5 K4T5116 |
512Mb B-die DDR2 SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
