| PART |
Description |
Maker |
| CY7C225A06 |
512 x 8 Registered PROM
|
Cypress Semiconductor
|
| AM29DL400BT-120FC AM29DL400BT-80FCB AM29DL400BT-90 |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 80 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只，同时作业快闪记忆
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 70 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 80 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 70 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 80 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 90 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 90 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 90 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 90 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 120 ns, PDSO44
|
http://
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
|
| 63RS881 |
High Performance 1024 x 8 Registered PROM
|
Monolithic Memories
|
| HM-7620 HM7620 HM7621 HM-7621 |
(HM-7621) High Speed 512 x 4 PROM
|
HARRIS[Harris Corporation]
|
| AM29SL800B AM29SL800BB170EC AM29SL800BB170ECB AM29 |
High Speed CMOS Logic Octal Inverting Bus Transceiver with 3-State Outputs 20-CDIP -55 to 125
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-CDIP -55 to 125
High Speed CMOS Logic Quad 2-Input EXCLUSIVE OR Gates 14-CDIP -55 to 125
4-Bit Magnitude Comparator 16-CDIP -55 to 125
High Speed CMOS Logic Dual Positive-Edge Trigger D Flip-Flops with Set and Reset 14-CDIP -55 to 125
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.8伏的CMOS只超低电压快闪记忆体
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 170 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
| AM27S45A |
(AM27S45 / AM27S47 (A/SA)) 16384-Bit Bipolar Registered PROM
|
AMD
|
| HYMP564R72P8-E3_C4 HYMP125R72M4-E3 HYMP125R72M4-E3 |
240pin Registered DDR2 SDRAM DIMMs based on 512 Mb 1st ver.
|
HYNIX[Hynix Semiconductor]
|
| AM29LV004BT-80FE AM29LV004BB-80EI AM29LV004BT-80FC |
4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 8 FLASH 3V PROM, 80 ns, PDSO40
512K X 8 FLASH 3V PROM, 70 ns, PDSO40
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
SPANSION LLC
|
| S29WS128P0PBAW002 S29WS256P0PBAW000 S29WS128P0LBAW |
512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory 8M X 16 FLASH 1.8V PROM, 80 ns, PBGA84
512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory 16M X 16 FLASH 1.8V PROM, 80 ns, PBGA84
512/256/128 Mb (32/16/8 M x 16 bit) 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory 32M X 16 FLASH 1.8V PROM, 80 ns, PBGA84
|
Spansion, Inc.
|
| AM27S35ADC-S AM27S35PC-S AM27S35_BKA AM27S35_BUA A |
(AM27S35) 8192 Bit Bipolar Registered PROM
8-Bit Binary Counters With Input Registers 16-SO 0 to 70
8-Bit Binary Counters With Input Registers 16-SOIC 0 to 70
Serial-in shift registers with output latches 16-SO 0 to 70
8-Bit Binary Counters With Input Registers And 3-State Outputs 20-SOIC 0 to 70
Serial-in shift registers with output registers 16-PDIP 0 to 70
Serial-in shift registers with output registers 16-SOIC 0 to 70 1K X 8 OTPROM, CDFP24
8-Bit Binary Counters With Input Registers 16-PDIP 0 to 70 1K X 8 OTPROM, CDIP24
8,192-Bit (1024x8) Bipolar Registered PROM with Programmable INITIALIZE input 1K X 8 OTPROM, CDIP24
8,192-Bit (1024x8) Bipolar Registered PROM with Programmable INITIALIZE 8,192位（1024x8）双极注册胎膜早破与可编程初始化
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
|
| HMP525R7FFP4C-E3 HMP512R7FFP4C-E3 HMP512P7FFP4C-Y5 |
240pin Registered DDR2 SDRAM DIMMs based on 512 Mb F ver.
DDR DRAM MODULE, PBGA60 ROHS COMPLIANT, FBGA-60
|
Hynix Semiconductor, Inc.
|
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