| PART |
Description |
Maker |
| KTK211 |
FM RF,AM RF,VHF Band Amp.
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY/ VHF BAND AMPLIFIER)
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER) N通道结FIFLD EFFFCT晶体管（高频，甚高频波段放大器）
|
Korea Electronics (KEC)
KEC(Korea Electronics)
KEC Holdings
|
| ENA1108 15GN03MA |
NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifier Applications
VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Sanyo Semicon Device
|
| MT6L61AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| KTC4080 KTC4079 |
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, VHF BAND AMPLIFIER)
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY/ HF VHF BAND AMPLIFIER)
|
KEC(Korea Electronics)
|
| BB304C BB304CDW-TL-E B304CDW-TL-E |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
| BLF573S BLF573 |
HF / VHF power LDMOS transistor
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
HF - VHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| ENA1090A 2SC5374A12 |
VHF to UHF Band OSC, High-Frequency Amplifi er Applications
|
Sanyo Semicon Device
|
| 2SC5375 |
VHF to UHF Band OSC/ High-Frequency Amp Applications
VHF TO UHF BAND OSC, HIGH-FREQUENCY AMP APPLICATIONS
|
Sanyo Semicon Device
|
| KTC3192 |
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY/ HF/ VHF BAND AMPLIFIER)
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, HF, VHF BAND AMPLIFIER)
|
KEC[KEC(Korea Electronics)]
|
| KTC3883 |
TRIPLE DIFFUSED PNP TRANSISTOR(HIGH FREQUENCY, VHF BAND AMPLIFIER)
|
KEC[KEC(Korea Electronics)]
|
