| PART |
Description |
Maker |
| MX-J500 MX-J506 MX-J700 |
(MX-J500/506/700) Compact Component System
|
JVC
|
| CMPSH-3SE CMPSH-3AE CMPSH-3CE CMPSH-3E |
SMD Schottky Diode Dual: High Current: Common Cathode
SMD Schottky Diode Dual: High Current: In Series
SMD Schottky Diode Single: High Current
SMD Schottky Diode Dual: High Current: Common Anode
ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES
|
CENTRAL[Central Semiconductor Corp]
|
| CBR06C130FAGAC |
CBR-SMD RF C0G, Ceramic, High Q, 13 pF, 1%, 250 V, 0603, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CBR06C559BAGAC |
CBR-SMD RF C0G, Ceramic, High Q, 5.5 pF, /-0.1 pF, 250 V, 0603, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CBR06C910FAGAC |
CBR-SMD RF C0G, Ceramic, High Q, 91 pF, 1%, 250 V, 0603, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| TCM1-ED8427 |
0.09 MHz - 505 MHz RF TRANSFORMER
|
MINI-CIRCUITS
|
| CW201212-R33J CW201212-12NJ CW201212-R56J CW201212 |
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.012 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.91 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS-HIGH Q CHIP INDUCTOR 1 ELEMENT, 0.0033 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Inductor; Inductor Type:High Frequency; Inductance:13.3nH; Inductance Tolerance: /- 5 %; Current Rating:600mA; Series:CW201212; Package/Case:0805; Core Material:Alumina Ceramic; Leaded Process Compatible:Yes RoHS Compliant: Yes
|
Bourns, Inc.
BOURNS INC
|
| CBR04C309B5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 3 pF, /-0.1 pF, 50 V, 0402, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| CBR04C270F5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 27 pF, 1%, 50 V, 0402, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
| ISPLSI2064VE ISPLSI2064VE-100LB100 ISPLSI2064VE-10 |
3.3V In-System Programmable High Density SuperFAST?PLD
3.3VIn-SystemProgrammableHighDensitySuperFASTPLD
3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 7 ns, PQFP44
CRYSTAL 16.0 MHZ 20PF SMD EE PLD, 13 ns, PQFP100
CRYSTAL 20.0 MHZ 20PF SMD
RES 180K-OHM 1% 0.063W 200PPM THK-FILM SMD-0402 TR-7-PA2MM
3.3V In-System Programmable High Density SuperFAST PLD
3.3V In-System Programmable High Density SuperFAST⑩ PLD
3.3V In-System Programmable High Density SuperFAST?/a> PLD
280 MHz 3.3V in-system prommable superFAST high density PLD
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
|
|
