PART |
Description |
Maker |
K4H510838C-UCB3 K4H510438C-UCB0 K4H510438C-ULA2 K4 |
512MB C-DIE DDR SDRAM SPECIFICATION
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4H511638G |
512Mb G-die DDR SDRAM Specification
|
Samsung semiconductor
|
HYS72D64320HU-6-C HYS64D16301GU5C HYS64D16301GU-5- |
DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank DDR SDRAM Modules - 256MB (32Mx72) PC2700 1-bank DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank DDR SDRAM Modules - 256MB (32Mx64) PC3200 1-bank DDR SDRAM Modules - 128MB (16Mx64) PC3200 1-bank DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank 184-Pin Unbuffered Double Data Rate SDRAM
|
INFINEON[Infineon Technologies AG]
|
K4H510838C-ZCCC K4H510438C-ZCCC K4H510838C-ZCB3 K4 |
512Mb C-die DDR SDRAM Specification 荤的512Mb芯片DDR SDRAM内存规格 CAP 0.01UF 1000V 10% X7R SMD-1812 TR-13 FLEXITERM
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
M470L6524C M470L6524CU0-LCC M470L3324CU0-CA2 M470L |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die DDR SDRAM的缓冲模8 4针缓冲模块的基于C12Mb芯片
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
M368L6523DUS-LB3 M381L6523DUM-LCC M381L6523DUM-LB3 |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模84pin缓冲模块的发展为本的512Mb芯片4/72-bit非ECC /有铅ECC6 TSOP-II免费(符合RoHS
|
http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYS72D128521GR-7-B HYS72D64500GR-8-B HYS72D128520G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank DDR SDRAM Modules - 1GB (128Mx72) PC2100 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank 256 MB 32M x 72 PC2100 Registered DIM... DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-2-2 2-bank Registered DDR SDRAM-Modules Low Profile Registered DDR-I SDRAM-Modules
|
INFINEON[Infineon Technologies AG]
|
M470L2923BN0-CA2 M470L6524BTU0-CLCC M470L2923BN0-C |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HYS72D64320GBR-7-B HYS72D32300GBR-7-B HYS72D64300G |
DDR SDRAM Modules - 512 MB (64Mx72) PC2700; 2-bank DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank, FBGA based DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank, FBGA based DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank, FBGA based DDR SDRAM Modules - 512MB (64Mx72) PC3200 1-bank, FBGA based DDR SDRAM Modules - 512MB (64Mx72) PC2700 1-bank, FBGA based DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank available 2Q/04 DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank, FBGA based DDR SDRAM Modules - 1GB (128Mx72) PC2700 2-bank, FBGA based DDR SDRAM Modules - 256MB (32Mx72) PC2700 1-bank, FBGA based
|
Infineon
|
K4T51163QB K4T51163QB-GCCC K4T51163QB-GCD5 K4T5116 |
512Mb B-die DDR2 SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4T51043QE |
512Mb E-die DDR2 SDRAM Specification
|
Samsung semiconductor
|