| PART |
Description |
Maker |
| ISPLSI2128VE ISPLSI2128VE-100LB100 ISPLSI2128VE-10 |
3.3V In-System Programmable SuperFAST?High Density PLD
CRYSTAL 32.768KHZ 12.5PF SMD
3.3V In-System Programmable SuperFAST?/a> High Density PLD
3.3V In-System Programmable SuperFAST⑩ High Density PLD
3.3V In-System Programmable SuperFAST High Density PLD
CRYSTAL 12.0 MHZ 20PF SMD
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA208
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 6 ns, PBGA208
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PBGA100
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA100
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP160
3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP100
3.3V In-System Programmable SuperFASTHigh Density PLD 3.3在系统可编程超快⑩高密度可编程逻辑器件
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
3.3V In-System Programmable SuperFAST?/a> High Density PLD
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| ISPLSI2032VE ISPLSI2032VE-110LB49 ISPLSI2032VE-110 |
225 MHz 3.3V in-system prommable superFAST high density PLD
3.3V In-System Programmable High Density SuperFAST?/a> PLD
3.3V In-System Programmable High Density SuperFAST?/a> PLD
3.3V In-System Programmable High Density SuperFAST⑩ PLD
3.3V In-System Programmable High Density SuperFAST PLD
IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4
IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.3
IC,Normally-Closed Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 EE PLD, 13 ns, PQCC44
3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 13 ns, PQFP44
3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 6 ns, PQCC44
3.3V In-System Programmable High Density SuperFASTPLD 3.3在系统可编程高密度PLD的超快⑩
3.3VIn-SystemProgrammableHighDensitySuperFASTPLD
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| SET111411 SET111403 SET111412 SET111419 SET111404 |
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?400V,娓╁害55???骞冲??存??垫?45A,楂??搴?澶х?娴?涓???ㄦ尝妗ユ?娴??)
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?1000V,娓╁害55???骞冲??存??垫?30A,楂??搴?澶х?娴?涓???ㄦ尝妗ユ?娴??)
3 PHASE, 30 A, SILICON, BRIDGE RECTIFIER DIODE
High Density,High Current,3-Phase Full Wave Bridge Rectifier(????靛?150V,娓╁害55???骞冲??存??垫?45A,楂??搴?澶х?娴??涓???ㄦ尝妗ユ?娴??)
High Density,High Current,3-Phase Full Wave Bridge Rectifier(反向电压1000V,温度55℃时平均整流电流45A,高密大电三相全波桥整流器) 高密度，大电3 -相全波桥式整流器（反向电000V的温5℃时平均整流电流45A条，高密度，大电流，三相全波桥整流器
HIGH CURRENT, 3-PHASE FULL WAVE BRIDGE ASSEMBLY
|
Semtech, Corp.
Semtech Corporation
|
| MACH211SP-12 MACH211SP-7JC MACH211SP-7VC MACH211SP |
RES 35.7K-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
SCREW MACHINE SLOTTED 6-32X3/4
High-Density EE CMOS Programmable Logic EE PLD, 16 ns, PQCC44
High-Density EE CMOS Programmable Logic 高密度电子工程CMOS可编程逻辑
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| ISPLSI2032A-110LT48I ISPLSI2032A-135LJI ISPLSI2032 |
In-System Programmable High Density PLD EE PLD, 8 ns, PQFP44
In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件
In-System Programmable High Density PLD EE PLD, 10 ns, PQCC44
In-System Programmable High Density PLD EE PLD, 10 ns, PQFP48
In-System Programmable High Density PLD EE PLD, 7.5 ns, PQFP44
|
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| SDHD7.5K SDHP7.5K SDHP15K SDHD15K SDHN7.5K |
STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压7500V，温5℃时平均整流电流0.4A,高密高电标准恢复倍增整流
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温5℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温25℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
0.8 A, 7500 V, 2 ELEMENT, SILICON, SIGNAL DIODE
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压15000V，温25℃时平均整流电流0.4A,高密高电标准恢复倍增整流 高密度，高电压，标准恢复倍流整流（反向电5000V，温25℃时平均整流电流0.4A，高密度，高电压，标准恢复倍增整流器）
|
Semtech Corporation
Semtech, Corp.
|
| MCN51-8S3-PFA MCN51-16P2-DS MCN51-16P2-PFA MCN51-1 |
CAP 0.1UF 50V 20% Z5U RAD.20 .20X.20 BULK 高电流，高密度，电源连接
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 高电流，高密度，电源连接
High Current, High Density, Power Connectors 高电流，高密度，电源连接
High Current / High Density / Power Connectors
|
HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| IDT72V2103L10PF IDT72V2113L10PFI IDT72V2113L7-5BCI |
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 128K X 18 OTHER FIFO, 10 ns, PQFP80
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 128K X 18 OTHER FIFO, 6.5 ns, PQFP80
3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 3.3伏高密度SUPERSYNC二窄总线先进先出
Octal bus transceiver/register (3-State) - Description: Transceiver/Register (3-State) ; Fmax: 350 MHz; Logic switching levels: TTL ; Number of pins: 24 ; Output drive capability: -32/ 64 mA ; Propagation delay: 4.4 ns; Voltage: 4.5-5.5 V
|
Integrated Device Technology, Inc.
|
| PC825 PC845 PC815 PC835 |
(PC815 - PC845) High Sensitivity / High Density Mounting Type Photocoupler
High Sensitivity, High Density Mounting Type Photocoupler
|
SHARP[Sharp Electrionic Components]
|
| EDI3DG328V8D1 EDI3DG328V10D1 |
8Megx32 Synchronous High Density DRAM Modules 3.3V(125MHz,3.3V,8M x32同步高密度动态RAM模块)
8Megx32 Synchronous High Density DRAM Modules 3.3V(100MHz,3.3V,8M x32同步高密度动态RAM模块) 8Megx32同步高密度DRAM模块3.300MHz的，3.3分X32号，同步高密度动态内存模块）
|
Bourns, Inc.
|
| QL3025-0PQ208M QL3025-2PQ208M QL3012 QL3012-0PL84M |
60,000 usable PLD gate pASIC3 FPGA combining high performance and high density.
40,000 usable PLD gate pASIC3 FPGA combining high performance and high density.
25,000 usable PLD gate pASIC3 FPGA combining high performance and high density.
pASIC3 FPGA Combining High Performance and High Density(高性能和高密度相结合的pASIC3现场可编程门阵列)
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
QuickLogic Corp.
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