| PART |
Description |
Maker |
| 3VD297650YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD212800YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD379600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD396500YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD235600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD045060JL |
Nchannel MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| TNPW2010 TNPW0805 TNPW1206 TNPW0402 TNPW1210 TNPW2 |
Ultra-stable thin film technology; Pulse resistant;
Thin Film Flat Chip Resistors;
High-Stability
Thin Film, Rectangular, Resistor Chips
Thin Film/ Rectangular/ Resistor Chips
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| OD-24X24-C |
HIGH-POWER GaAlAs EMITTER CHIPS
|
OptoDiode Corp
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| T497C475K006AT6210 T497C475K006AH6210 |
HIGH GRADE COTS TANTALUM CHIPS 高品位的COTS钽切
|
KEMET Corporation
|
