| PART |
Description |
Maker |
| GM71C17403C-6 GM71C17403C-7 GM71C17403CL-7 GM71S17 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns
4,194,304 WORDS X 4 BIT CMOS DYNAMIC RAM
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power
|
Hynix Semiconductor
|
| MCM54410AN60 MCM54410AN60R2 MCM54410AN-60 MCM54410 |
1M x 4 CMOS DRAM
1M x 4 CMOS Dynamic RAM Write Per Bit Mode
|
Motorola, Inc
|
| MB814400A-80 MB814400A-60 MB814400A-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4M ×1 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB81V17800A-60L |
CMOS 2 M ×8 BIT Fast Page Mode DRAM(CMOS 2 M ×8 位快速页面存取模式动态RAM) 的CMOS 2米8位快速页面模式的DRAM的CMOS2米8位快速页面存取模式动态内存）
|
Fujitsu, Ltd.
|
| ST62E30BF1 ST6230BM1/XXX ST62P30BM3/XXX ST62P30BM6 |
MICROCONTROLLER|8-BIT|ST6200 CPU|CMOS|DIP|28PIN|CERAMIC
MICROCONTROLLER|8-BIT|ST6200 CPU|CMOS|SOP|28PIN|PLASTIC
IC, 60FBGA, 512MBIT DDR DRAM 60 PIN BGA 32MBX16
MICROCONTROLLER|8-BIT|ST6200 CPU|CMOS|DIP|28PIN|PLASTIC
IC, MEM, SDRAM DDR166, 32 MEG X 16, 16 BIT, 6NS, 2.5V, FBGA60 单片机| 8位| ST6200的CPU |的CMOS |专科| 28脚|塑料
|
Black Box, Corp.
|
| AS4C14400-50TC AS4C14400-50JC |
1M-bit 4 CMOS DRAM (Fast page mode or EDO) 1M X 4 FAST PAGE DRAM, 50 ns, PDSO20
1M-bit ??4 CMOS DRAM (Fast page mode or EDO)
|
Alliance Semiconductor, Corp.
ALLIANCE SEMICONDUCTOR CORP
|
| MB81C4256-10 |
CMOS 1M-Bit DRAM
|
ETC
|
| UPD424260LE-70 |
CMOS 4M Bit DRAM
|
NEC
|
| HY514400 |
1M x 4-Bit CMOS DRAM
|
Hyundai
|
| HYB5117405BJ-60 HYB5117405BJ-50 HYB5116405BJ-60 HY |
4M x 4 Bit EDO DRAM 3.3 V 2k 60 ns
4M x 4 Bit EDO DRAM 3.3 V 2k 50 ns
4M x 4 Bit 2k 3.3 V 60 ns EDO DRAM
4M x 4 Bit 2k 3.3 V 50 ns EDO DRAM
-4M x 4-Bit Dynamic RAM 2k & 4k Refresh
4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode - EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYM536400A |
4M x 36-Bit CMOS DRAM Module
|
Hyundai
|
