| PART |
Description |
Maker |
| MT8D132M-XXX MT16D232M-XXX MT16D232-6X MT8D132-7X |
1 MEG, 2 MEG x 32 DRAM MODULES 1乙二醇，二乙二醇× 32 DRAM模块
|
Micron Technology, Inc.
|
| MT16D132 |
1 MEG x 32 DRAM MODULES
|
Micron Technology
|
| AS4C4024883C |
1 MEG x 1 DRAM
|
AUSTIN[Austin Semiconductor]
|
| MT4C40005 MT4C40004 |
4 MEG x 4 DRAM
|
MICRON[Micron Technology]
|
| 4X16E43V 4X16E83V 4X16E83VTW-6 |
4 MEG x 16 EDO DRAM
|
List of Unclassifed Manufacturers
|
| MT4LC4M16N MT4LC4M16R MT4LC4M16R6 MT4LC4M16R6TG-6S |
4 MEG x 16 EDO DRAM
|
MICRON[Micron Technology]
|
| LC322260J LC322260T-70 LC322260T-80 LC322260J-70 |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode / Byte Read/Write
CONNECTOR ACCESSORY
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Read/Write
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode Byte Read/Write
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| AS4LC4M4883C AS4LC4M4 |
4 meg x 4 DRAM, 3.3V EDO page mode
4 MEG x 4 DRAM 3.3V, EDO PAGE MODE
|
ETC
AUSTIN[Austin Semiconductor]
|
| MT46V32M16P-5BJ |
Double Data Rate (DDR) SDRAM MT46V128M4 ?32 Meg x 4 x 4 banks MT46V64M8 ?16 Meg x 8 x 4 banks MT46V32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
| MT4C4007J |
1 MEG x 4 DRAM 5V, EDO PAGE MODE, OPTIONAL SELF REFRESH
|
Micron Technology
|
| MT48H4M16LFB4-75ITH MT48H4M16LFB4-8ITH |
4M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
Mobile SDRAM MT48H4M16LF ?1 Meg x 16 x 4 banks
|
Micron Technology
|
| LC322271J LC322271T-70 LC322271T-80 LC322271M |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode / Byte Write
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
SANYO[Sanyo Semicon Device]
|
