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HY27USXXX - (HY27SSxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512兆（64Mx8bit / 32Mx16bit）NAND闪存

HY27USXXX_144462.PDF Datasheet

Part No.

Description

(HY27SSxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512兆（64Mx8bit / 32Mx16bit）NAND闪存

File Size

731.68K / 43 Page

Maker

Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: HY27US08121M

Maker: HY

Pack: TSOP

Stock: Reserved

Unit price for :

50: $8.31

100: $7.89

1000: $7.48

Email: oulindz@gmail.com

Homepage

http://www.hynix.com/eng/

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Full text search : (HY27SSxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512兆（64Mx8bit / 32Mx16bit）NAND闪存

Related Part Number

PART	Description	Maker
HY27US08121M HY27US16121M HY27USXXX HY27SS08121M H	512Mbit (64Mx8bit / 32Mx16bit) NAND Flash	HYNIX[Hynix Semiconductor]
HYMD232646B8-H HYMD232646B8-K HYMD232646B8-L HYMD2	Unbuffered DDR SDRAM DIMM 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 32Mx64\|2.5V\|M/K/H/L\|x8\|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 \| 2.5V的\| /升\| x8 \| DDR SDRAM内存- 256MB的无缓冲DIMM	Hynix Semiconductor http://
K4J52324QC K4J52324QC-BJ14 K4J52324QC-BC14 K4J5232	512Mbit GDDR3 SDRAM	SAMSUNG[Samsung semiconductor]
H55S5132EFR H55S5132EFR-75M	512Mbit (16Mx32bit) Mobile SDR Memory	Hynix Semiconductor
HYB25D512400BC-5 HYB25D512160BC-5 HYB25D512400BT-6	512Mbit Double Data Rate (DDR) Components	Infineon
M65KG512AB6W9 M65KG512AB M65KG512AB6W8 M65KG512AB8	512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM	STMicroelectronics
K4S511632C K4S511632C-KC K4S511632C-L1H K4S511632C	8M x 16Bit x 4 Banks Synchronous DRAM Data Sheet DDP 512Mbit SDRAM 12兆内	Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
K4J52324QC K4J52324QC-BJ12 K4J52324QC-BC20 K4J5232	512Mbit GDDR3 SDRAM 512MB的GDDR3 SDRAM	http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF	256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package	Numonyx B.V

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