| PART |
Description |
Maker |
| KTK211 |
FM RF,AM RF,VHF Band Amp.
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY/ VHF BAND AMPLIFIER)
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER) N通道结FIFLD EFFFCT晶体管（高频，甚高频波段放大器）
|
Korea Electronics (KEC)
KEC(Korea Electronics)
KEC Holdings
|
| 2SC2118 |
VHF BAND POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
| 2SC2639 |
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| S-AV28 |
VHF Band HAM FM RF Power Amplifier Module
|
Toshiba
|
| PF0310A |
MOS FET Power Amplifier Module for VHF Band
|
HITACHI[Hitachi Semiconductor]
|
| NE55410GR07 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Labs
|
| MF-MSMD030 MF-MSMD020 MF-MSMD010 MF-MSMD014 MF-MSM |
Ka Band LNA
Q-band Power Amplifier
17 - 43 GHz MPA/Multiplier
Ka-Band Power Amplifier
27 - 31 GHz 2W Balanced Power Amplifier
K Band LNA
Ka Band HPA
PTC Resettable Fuses
|
Bourns Inc.
Bourns Electronic Solutions
|
| 2SK3074 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF-BAND POWER AMPLIFIER
|
TOSHIBA
|
| 2SK3075 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF .BAND POWER AMPLIFIER
|
TOSHIBA
|
