Part Number Hot Search : 
MAX2991E CMPZ5239 HT3001 ST16C650 MBT44 PHD98N03 SCM0100 TIL300
Product Description
Full Text Search

KMM53216004CK - 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V

KMM53216004CK_127294.PDF Datasheet


 Full text search : 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V


 Related Part Number
PART Description Maker
KMM53216004BK KMM53216004BKG 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
SAMSUNG SEMICONDUCTOR CO. LTD.
KMM53616004BKG KMM53616004BK 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
SAMSUNG[Samsung semiconductor]
KMM53232004BK KMM53232004BKG 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
Samsung semiconductor
KMM5364005CKG KMM5364105CKG KMM5364105CK KMM536400 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K,刷新,5V
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
KMM372C1680BK KMM372C1600BK KMM372C1600BS KMM372C1 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
SAMSUNG SEMICONDUCTOR CO. LTD.
MT48LC16M16A2FG-7EITD MT48LC16M16A2P-75ITDTR 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 8 X 14 MM, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
Micron Technology, Inc.
K4S51323PF-MF90 K4S51323PF-MF75 K4S51323PF-MF1L K4 16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 LEAD FREE, FBGA-90
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 FBGA-90
4M x 32Bit x 4 Banks Mobile-SDRAM
From old datasheet system
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
KMM366F1600BK2 KMM366F1680BK2 16M x 64 DRAM DIMM(16M x 64 动RAM模块)
16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
SAMSUNG SEMICONDUCTOR CO. LTD.
HYB3165405BT-40 HYB3164405BT-40 HYB3164405BJ-40 HY 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 40 ns, PDSO32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
http://
Infineon Technologies AG
SIEMENS AG
HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM511640 16M EDO DRAM (4-Mword x 4-bit), 50ns
16M EDO DRAM (4-Mword x 4-bit), 60ns
16M EDO DRAM (4-Mword x 4-bit), 70ns
Elpida Memory
KMM372C1600BK 16M x 72 DRAM DIMM(16M x 72 动RAM模块)
SAMSUNG SEMICONDUCTOR CO. LTD.
 
 Related keyword From Full Text Search System
KMM53216004CK Product KMM53216004CK speech voice KMM53216004CK Shunt KMM53216004CK Logic KMM53216004CK circuit board
KMM53216004CK filetype:pdf KMM53216004CK Instrument KMM53216004CK terminals description KMM53216004CK Electronic KMM53216004CK Flash
 

 

Price & Availability of KMM53216004CK

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.16769003868103