PART |
Description |
Maker |
KMM53216004BK KMM53216004BKG |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KMM53616004BKG KMM53616004BK |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM53232004BK KMM53232004BKG |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
KMM5364005CKG KMM5364105CKG KMM5364105CK KMM536400 |
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K,刷新,5V
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor]
|
KMM372C1680BK KMM372C1600BK KMM372C1600BS KMM372C1 |
16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
MT48LC16M16A2FG-7EITD MT48LC16M16A2P-75ITDTR |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 8 X 14 MM, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
|
Micron Technology, Inc.
|
K4S51323PF-MF90 K4S51323PF-MF75 K4S51323PF-MF1L K4 |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 LEAD FREE, FBGA-90 16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 FBGA-90 4M x 32Bit x 4 Banks Mobile-SDRAM From old datasheet system
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KMM366F1600BK2 KMM366F1680BK2 |
16M x 64 DRAM DIMM(16M x 64 动RAM模块) 16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYB3165405BT-40 HYB3164405BT-40 HYB3164405BJ-40 HY |
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 40 ns, PDSO32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
|
http:// Infineon Technologies AG SIEMENS AG
|
HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM511640 |
16M EDO DRAM (4-Mword x 4-bit), 50ns 16M EDO DRAM (4-Mword x 4-bit), 60ns 16M EDO DRAM (4-Mword x 4-bit), 70ns
|
Elpida Memory
|
KMM372C1600BK |
16M x 72 DRAM DIMM(16M x 72 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|