| PART |
Description |
Maker |
| K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| W982516AH-75 W982516AH75L W982516AH-7 W982516AH-8H |
4M x 4 BANKS x 16BIT SDRAM
|
WINBOND[Winbond]
|
| HY57V561620CLT-6 HY57V561620CLT-8 HY57V561620CLT-K |
4 BANKS X 4M X 16BIT SYNCHRONOUS DRAM
|
Hynix Semiconductor
|
| K4S161622D-TC_L10 K4S161622D-TC_L55 K4S161622D-TC_ |
512K x 16Bit x 2 Banks Synchronous DRAM
|
Samsung semiconductor
|
| K4S561633F K4S561633F-C K4S561633F-E K4S561633F-F1 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S56163LC-RFR |
4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP Data Sheet
|
Samsung Electronic
|
| K4M281633F K4M281633F-C K4M281633F-F1L K4M281633F- |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行54FBGA移动SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM416S8030BN-G_FL KM416S8030BN KM416S8030BN-G_FH K |
128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor]
|
| K4M561633G K4M561633G-RBF1H K4M561633G-RBF1L K4M56 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S511632C K4S511632C-KC K4S511632C-L1H K4S511632C |
8M x 16Bit x 4 Banks Synchronous DRAM Data Sheet
DDP 512Mbit SDRAM 12兆内
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
