PART |
Description |
Maker |
AT28C64-25 AT28C64-20 AT28C64E-1 AT28C64E-12PI AT2 |
64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 250 ns, PDSO28 8-Bit Shift Registers With 3-State Output Registers 16-TSSOP -40 to 85 8K X 8 EEPROM 5V, 250 ns, PQCC32 Octal Edge-Triggered D-Type Flip-Flops With 3-State Outputs 20-SOIC -40 to 85 8K X 8 EEPROM 5V, 250 ns, UUC27 64K 8K x 8 Battery-Voltage CMOS E2PROM 8K X 8 EEPROM 5V, 150 ns, PDSO28 Dual Positive-Edge-Triggered D-Type Flip-Flops 14-SSOP -40 to 85 8K X 8 EEPROM 5V, 250 ns, PDSO28 64K (8K X 8) CMOS E2PROM 64K 8K x 8 CMOS E2PROM
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Atmel, Corp. PROM Atmel Corp. ATMEL[ATMEL Corporation]
|
AT28BV64B06 AT28BV64B-20TU AT28BV64B-20JU AT28BV64 |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
|
ATMEL Corporation
|
AT28BV64B-20SC AT28BV64B-20SI AT28BV64B-20TC AT28B |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
|
Atmel
|
AT28C16-15 AT28C16-15SI AT28C16E-15SI AT28C16 AT28 |
64K 8K x 8 Battery-Voltage CMOS E2PROM 2K X 8 EEPROM 5V, 150 ns, PDSO24 16K (2K x 8) Parallel EEPROMs 16K 2K x 8 CMOS E2PROM
|
Atmel, Corp. ATMEL[ATMEL Corporation]
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K6F1016U4B K6F1016U4B-F K6F1016U4B-FF55 K6F1016U4B |
64K X 16 STANDARD SRAM, 55 ns, PBGA48 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
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AM27C512-15F6 AM27C512-120PC AM27C512-70DI ADVANCE |
64K X 8 UVPROM, 120 ns, CDIP28 64K X 8 OTPROM, 90 ns, PDIP28 64K X 8 UVPROM, 55 ns, CDIP28 64K X 8 UVPROM, 90 ns, CDIP28 64K X 8 UVPROM, 70 ns, CDIP28 IC 集成电路 512 Kilobit (64 K x 8-Bit) CMOS EPROM
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ADVANCED MICRO DEVICES INC SPANSION LLC Rochester Electronics, LLC AMD
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25C02 CAT25C02 25C01 CAT25C01 25C04 CAT25C04 25C08 |
1K/2K/4K/8K/16K SPI Serial CMOS E2PROM 64K 8K x 8 Battery-Voltage CMOS E2PROM 64KK的8电池电压的CMOS E2PROM 1K/2K/4K/8K/16KSPISerialCMOSE2PROM
|
CatalystSemiconductor http:// CATALYST[Catalyst Semiconductor]
|
LA5619M |
Lead Battery Charger IC with Battery Voltage Detection Function
|
SANYO[Sanyo Semicon Device]
|
GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM 64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100 64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100 117MHz 11ns 64K x 32 2M synchronous burst SRAM 138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
W27C512-45 W27C512P-12 W27C512P-45 W27C512P-70 W27 |
FAN 24 DC MUFFIN MC24H3 64K X 8 EEPROM 12V, 90 ns, PDIP28 Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes 64K X 8 ELECTRICALLY ERASABLE EPROM
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Winbond Electronics, Corp. Winbond Electronics Corp WINBOND[Winbond]
|
IDT7008L20J IDT7008L20JB IDT7008L20JI IDT7008S_L I |
64K x 8 Dual-Port RAM From old datasheet system IC,SRAM,64KX8,CMOS,LDCC,84PIN,PLASTIC HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 20 ns, CPGA84 HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 55 ns, PQCC84 HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM 64K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
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Integrated Device Techn... IDT[Integrated Device Technology] Integrated Device Technology Inc Integrated Device Technology, Inc.
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