| PART |
Description |
Maker |
| 2SJ600 2SJ600-Z |
Pch power MOSFET 60V RDS(on)1=50m ohm MAX. MP-3
|
NEC
|
| QS8J13 QS8J13TR |
-12V Pch Pch Middle Power MOSFET
|
ROHM
|
| FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
| IRCZ34 |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=60V, Rds(on)=0.050ohm, Id=30A)
|
International Rectifier
|
| IRFZ48V IRFZ48VPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A)
|
IRF[International Rectifier]
|
| IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR |
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFD014 |
Power MOSFET(Vdss=60V/ Rds(on)=0.20ohm/ Id=1.7A)
Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=1.7A)
60V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier
|
| SP8J5FRATB |
4V Drive Pch Pch MOSFET (Corresponds To AEC-Q101)
|
ROHM
|
| FW156 |
Pch Pch
From old datasheet system
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| STN3NE06 4877 |
N-Channel 60V-0.08Ω-3A - SOT-223 STripFETTM Power MOSFET(Ｎ沟道功率ＭＯＳＦＥ
N - CHANNEL 60V - 0.08ohm- 3A - SOT-223 STripFET POWER MOSFET
N - CHANNEL 60V - 0.08W - 3A - SOT-223 STripFET] POWER MOSFET
From old datasheet system
|
意法半导
STMicroelectronics
|
