| PART |
Description |
Maker |
| 13PD100-S |
The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ...
|
Anadigics Inc
|
| NDL5521PD NDL5521P NDL5521P1 NDL5521P1C NDL5521P1D |
2.5 Gb/s optical fiber communications 50 um InGaAs avalanche photo diode modul with MMF . With FC-PC connector, vertical flange.
2.5 Gb/s OPTICAL FIBER COMMUNICATIONS 50 um InGaAs AVALANCHE PHOTO DIODE MODULE WITH MMF
|
NEC
CEL[California Eastern Labs]
|
| PD300-003-3XX PD300-003-0XX PD300-003-5XX PD300-00 |
300レm InGaAs Photodiode 300レ米铟镓砷光电二极管
300レm InGaAs Photodiode PHOTO DIODE
|
ANADIGICS, Inc.
|
| PD7088 PD7XX8 PD708C8 |
InGaAs PIN PHOTO DIODES
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MXP4005 |
InGaAs/InP PIN Photo Detectors
|
Microsemi
|
| LX3050 LX3052 |
InGaAs/InP PIN Photo Detectors
|
Microsemi
|
| NR6800 |
80 um InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS
|
California Eastern Labs
|
| NDL5551P1 NDL5551P2 NDL5553P NDL5553P1 NDL5553P1S |
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs PIN PHOTO DIODE MODULE
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 80 mm InGaAs PIN PHOTO DIODE MODULE 1 000 600 nm的光纤通信80毫米铟镓砷PIN光电二极管模
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NDL5551 NDL5551P NDL5551P1C NDL5551P1D NDL5551P2C |
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE 1 000 600 nm的光纤通信50毫米的铟镓砷雪崩光电二极管模
|
NEC, Corp.
NEC[NEC]
|
| NDL5531P NDL5531P1C NDL5531P1D NDL5531P2C NDL5531P |
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE 1 000 600 nm的光纤通信30毫米的铟镓砷雪崩光电二极管模
|
NEC, Corp.
NEC[NEC]
|
| PD-118009 |
InGaAs PIN PHOTODIODES 1 mm InGaAs PIN Photdiode with TO-46 Package
|
Optoway Technology Inc
|
