| PART |
Description |
Maker |
| NAND04GW3B2A |
NAND Flash Memories
|
ST Microelectronics
|
| NAND512W3A2C |
NAND Flash Memories
|
Numonyx
|
| NAND512W3A2C NAND512R4A2C |
(NAND512xxA2C) NAND Flash Memories
|
STMicroelectronics
|
| NAND01G-M NAND256-M |
(NANDxxx-M) NAND Flash Memories
|
ST Microelectronics
|
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
| NAND16GAH0D NAND16GAH0DZA5F |
1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard⑩ interface
|
Numonyx B.V
|
| NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
ST Microelectronics
|
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| PSD835G2V_07 PSD835G2V PSD835G2V-120U PSD835G2V-12 |
Flash PSD, 3 V supply, for 8-bit MCUs 4 Mbit 256 Kbit dual Flash memories and 64 Kbit SRAM
|
STMICROELECTRONICS[STMicroelectronics]
|
| TC58DVM72A1F TC58DVM72A1FT00 TC58DVM72F1FT00 TC58D |
Flash - NAND
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| LH28F160BGH-TL LH28F160BG-TL |
16 M-bit (1 MB x 16) Smart 3 Flash Memories
|
SHARP[Sharp Electrionic Components]
|
