| PART |
Description |
Maker |
| HM64YLB36512BP-33 HM64YLB36512BP-28 HM64YLB36512-1 |
512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit)
|
Renesas Electronics Corporation
|
| PTF10120 |
120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor 120瓦，1.8-2.0 GHz的GOLDMOS场效应晶体管
120 Watts, 1.8.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| MCM69R736AZP5 MCM69R736AZP5R MCM69R736AZP8 MCM69R7 |
4M Late Write HSTL 128K X 36 LATE-WRITE SRAM, 4 ns, PBGA119
Circular Connector; No. of Contacts:22; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:36; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:36-1 RoHS Compliant: No
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| MASW-000936-001SMB |
PIN Diode SPDT 120 Watt Switch for 0.05 - 6.0 GHz Higher Power Applications
|
M/A-COM Technology Solu...
|
| K7P323688M-HC250 K7P323688M-GC250 |
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANCE, BGA-119
|
TOKO, Inc.
|
| MCM69L818AZP9.5R MCM69L736A MCM69L736AZP10.5 MCM69 |
4M Late Write HSTL
|
MOTOROLA[Motorola, Inc]
|
| MCM63L836A |
8M Late Write HSTL
From old datasheet system
|
Motorola
|
| MCM63R736 |
4M Late Write HSTL
From old datasheet system
|
Motorola
|
| IS61DDB41M36A |
Synchronous pipeline read with late write operation
|
Integrated Silicon Solu...
|
| 2N7002T |
SOT-523 Plastic-Encaps u late MOSFET
|
Jiangsu High diode Semi...
|
| MXP1005 |
Solar Array Diode; Package: SEE_FACTORY; IO (A): 2.25; Cj (pF): 600; Vrwm (V): 120; VF (V): 0.84; TSTG/Top (ºC): 200; Tj (ºC): 150; IR (µA): 10; 2.25 A, 120 V, SILICON, RECTIFIER DIODE
Photovoltaic By-Pass Diode 120 Volts, 2.25 Amps
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| HM64YGB36100-15 |
32M Synchronous Late Write Fast Static RAM (1-Mword × 36-bit)
|
Renesas Electronics Corporation
|
