| PART |
Description |
Maker |
| BAT18 BAT18-06 BAT18-05 BAT18-04 |
Silicon RF Switching Diode
Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| BAP63-03 |
High speed switching for RF signals Low diode capacitance Low diode forward resistance
|
TY Semiconductor Co., Ltd
|
| BAS116 Q62702-A919 |
Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode) 0.25 A, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 1N3163 1N3162 1N3174 1N3176 1N3166 1N3167 |
Diode Switching 150V 240A 2-Pin DO-9
Diode Switching 100V 240A 2-Pin DO-9
Diode Switching 1KV 300A 2-Pin DO-9
Diode Switching 1.4KV 240A 2-Pin DO-9
Diode Switching 300V 240A 2-Pin DO-9
Diode Switching 350V 240A 2-Pin DO-9
|
New Jersey Semiconductor
|
| BAR63-04 BAR63-05 BAR63-06 Q62702-A1037 Q62702-A10 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) 硅PIN二极管（PIN码的高速开关二极管的射频信号的频率高达3 GHz的低正向电阻极低的电容）
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 1N3600 1N4150-1 1N4150 |
200mA Low Power, Switching
SWITCHING DIODE
|
MICROSEMI[Microsemi Corporation]
|
| 1N458 1N458A 1N458B |
Diode Switching 800V 1A 2-Pin DO-41
LOW LEAKAGE DIFFUSED SILICON PLANAR DIODE
|
New Jersey Semiconductors
New Jersey Semi-Conductor P...
|
| Q67040S4717 IKW30N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ...
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode 低损耗DuoPack：在IGBT的沟槽场终止技术和软，恢复快反平行何快恢复二极
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| CMAD6001 CMAD6001TR |
SURFACE MOUNT SILICON ULTRA LOW LEAKAGE SWITCHING DIODE
0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor Corp
|
| UD1006LS-SB5 |
Low VF Switching Diode
|
Sanyo Electric
|
