PART |
Description |
Maker |
HY27UA081G1M HY27SA161G1M HY27SA081G1M |
NAND Flash - 1Gb
|
Hynix Semiconductor
|
S30MS01GP25TAW000 S30MS01GP25TAW003 S30MS01GP25TAW |
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PDSO48 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 32M X 16 FLASH 1.8V PROM, 25 ns, PDSO48
|
Spansion, Inc.
|
DOM40KV032 HFDOM40KB016 HFDOM40KVXXX |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB,真正的IDE接口模式3.3 / 5.0V工作 40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB,真正的IDE接口模式.3 / 5.0V工作
|
Hanbit Electronics Co., Ltd.
|
K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C |
32M x 8 Bit NAND Flash Memory 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
S30MS01GP25TAW002 S30MS512P25TAW012 S30MS512P25TAW |
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit⑩ Technology
|
SPANSION[SPANSION]
|
KM29W32000T |
4M x 8 Bit NAND Flash Memory(4M x 8 浣?NAND???瀛???ī
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K9F4008W0A K9F4008W0A- K9F4008W0A-TCB0 K9F4008W0A- |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory 512K x 8 bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
TC58DVG02A1FT00 TC58DVG02A TC58DVG02A1FT |
Flash - NAND TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1-GBIT (128M*8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
HY27UH08AG5M HY27UH08AGDM HY27UH08AGDM-MPEB |
16Gbit (2Gx8bit) NAND Flash 2G X 8 FLASH 3.3V PROM, 25 ns, PBGA52 12 X 17 MM, 1 MM HEIGHT, LEAD FREE, TLGA-52
|
Hynix Semiconductor, Inc.
|
HY27UA081G1M HY27SA1G1M HY27SA161G1M-TPCB |
(HY27SAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 12000 ns, PDSO48
|
Hynix Semiconductor Inc.
|
HFDOM44KRXXX DOM44KR01G DOM44KR032 DOM44KR096 DOM4 |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating
|
HANBiT Electronics Co., Ltd. HANBIT[Hanbit Electronics Co.,Ltd]
|