| PART |
Description |
Maker |
| PTFB201402FC PTFB201402FCV1R0XTMA1 PTFB201402FCV1R |
High Power RF LDMOS Field Effect Transistor
|
Infineon Technologies A...
|
| PTF180101M |
High Power RF LDMOS Field Effect Transistor 10 W, 1.0 鈥?2.0 GHz
|
Infineon Technologies AG
|
| PTFA220121M |
High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz
|
Infineon Technologies AG
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| MAPLST1900-030CF |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 30W, 26V
|
Tyco Electronics
|
| PTF211802A PTF211802E PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W 2110-2170 MHz
LDMOS RF POWER FIELD EFFECT TRANSISTOR 180 W, 2110-2170 MHZ
LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
|
http://
INFINEON[Infineon Technologies AG]
|
| MAPL-000817-015C00 |
RF Power Field Effect Transistor LDMOS, 800-1700 MHz, 15W, 26V
|
Tyco Electronics
|
| MAPLST0810-030CF MAPLST0810-030CF-05-2004 |
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V
|
MACOM[Tyco Electronics]
|
| MAPLST0810-045CF |
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 45W, 26V
|
MACOM[Tyco Electronics]
|
| PTFA041501GL PTFA041501HL |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ??500 MHz
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ?500 MHz
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Infineon Technologies AG
|
| BLF4G20LS-110B |
From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors
NXP Semiconductors N.V.
|
