PART |
Description |
Maker |
W7MG1M32SVX90BNI W7MG1M32SVX70BNI W7MG1M32SVX-BN W |
8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module
|
WEDC[White Electronic Designs Corporation]
|
M58LW064D 8938 |
64 MBIT(8MB X8, 4MB X16, UNIFORM BLOCK)3V SUPPLY FLASH MEMORY From old datasheet system
|
STMicroelectronics
|
M29W640DB90N6E M29W640DT70N1T |
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory 64 MBIT (8MB X8 OR 4MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
STMicroelectronics ST Microelectronics
|
IBM0418A81QLAB IBM0418A41QLAB |
8Mb (512 x 18) SRAM(8M( 512x 18 ) 同步流水线式高性能CMOS静态RAM) 4Mb (256K x 18) SRAM(4M( 256Kx 18) 同步流水线式高性能CMOS静态RAM)
|
IBM Microeletronics
|
HSDL-1100008 HSDL-1100018 HSDL-1100007 HSDL-110001 |
IrDA 1.1 Compliant 4Mb/s 5V Transceiver. Top Option.Tape & ReelLINot Recommended for New Designs) IrDA 1.1Compliant 4Mb/s 5V Transceiver. Top Opt. 10 units/stripLINot Recommended for New Designs) IrDA 1.1Compliant 4Mb/s 5V Transceiver.Front Option.Tape & Reel<LINot Recommended for New Designs) 红外1.1Compliant 4Mb sV的Transceiver.Front Option.Tape IrDA 1.1Compliant 4Mb/s 5V Transceiver.Front Opt.10 units/strip<LINot Recommended for New Designs) 红外1.1Compliant 4Mb sV的Transceiver.Front Opt.10单位/条\u0026lt;LI\u0026gt;(不推荐用于新设计)
|
Ecliptek, Corp.
|
GS880F18 GS880F36T-11I GS880F36T-14 GS880F36T-12I |
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步静态RAM(带2位脉冲地址计数器)) 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 14 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 12 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
|
GSI Technology, Inc. Molex, Inc.
|
GS842Z18AB-180 GS842Z36AB-180 GS842Z36AB-150I GS84 |
180MHz 8ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM 180MHz 8ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM 150MHz 10ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM 166MHz 8.5ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM 150MHz 10ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
GS74108AX-7 GS74108AX-7I GS74108AJ-7I GS74108ATP-1 |
7ns 512K x 8 4Mb asynchronous SRAM 10ns 512K x 8 4Mb asynchronous SRAM
|
GSI Technology
|
M58WR064EB M58WR064ET M58WR064E-ZBT M58WR064ET80ZB |
64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory HDR P R 4P PW N 1X4 .100TQ BERGSTRIP .100CC SR STRAIGHT
|
SGS Thomson Microelectronics ST Microelectronics 意法半导
|